Silicon Materials

Our research aims to improve the quality of silicon materials used for solar cells, therefore increasing the efficiency and reducing the cost of silicon photovoltaics.

Low-cost silicon materials for solar cells, such as multicrystalline silicon wafers, or solar-grade silicon feedstocks, often contain significant quantities of unwanted impurities. Our research aims to understand the effects of these impurities, and to develop practical ways to reduce their impact, or remove them. There are several classes of important impurities: dopants (such as B, P and Al), which are very difficult to remove during purification; metals (such as Fe, Cr, Ni etc), which can create strong recombination centres; and light elements (such as O, C and N), which may create defects that cause recombination or shunting. Crystal defects such as grain boundaries and dislocations also play an important role, and can interact with the impurities, for example, by acting as preferred sites for precipitation of metals.

Even in prime quality monocrystalline wafers, intrinsic defects such as vacancies and self-interstitials, through their interactions with ever-present light elements such as O and N, can play a critical role in limiting cell performance, especially for high efficiency cell designs that are very sensitive to recombination.

Please visit the Projects list below for more details.

Prospective students

Interested in doing a PhD in our group? If you are an Australian or New Zealand citizen or permanent resident, and have a first class honours degree in Engineering or Physics, we may have a project that suits you. For international students, you will need outstanding undergraduate marks in order to be competitive for a scholarship at ANU. For more details, please visit the Projects list below and contact the academics listed.
 

Collaborators

The Institute for Solar Energy Research Hameln (ISFH, Germany)
The Energy Research Centre of the Netherlands (ECN)
The Fraunhofer Institute for Solar Energy Systems (Fh-ISE, Germany)
The University of New South Wales (UNSW)
BT Imaging
Apollon Solar
Sinton Instruments
 

 

Publication

2020

Journal papers

R. Basnet, S. P. Phang, C. Sun, F. E. Rougieux, and D. Macdonald, "Onset of ring defects in n-type Czochralski-grown silicon wafers," Journal of Applied Physics, vol. 127, no. 15, p. 153101, 2020. pdf

W. Chen, J. Stuckelberger, W. Wang, S. P. Phang, D. Kang, C. Samundsett, D. MacDonald, A. Cuevas, L. Zhou, and Y. Wan, "Influence of PECVD Deposition Power and Pressure on Phosphorus-Doped Polysilicon Passivating Contacts," IEEE Journal of Photovoltaics, vol. 10, no. 5, pp. 1239-1245, 2020. pdf

W. Chen, T. N. Truong, H. T. Nguyen, C. Samundsett, S. P. Phang, D. MacDonald, A. Cuevas, L. Zhou, Y. Wan, and D. Yan, "Influence of PECVD deposition temperature on phosphorus doped poly-silicon passivating contacts," Solar Energy Materials and Solar Cells, vol. 206, p. 110348, 2020. pdf

D. Kang, H. C. Sio, D. Yan, W. Chen, J. Yang, J. Jin, X. Zhang, and D. Macdonald, "Long-term stability study of the passivation quality of polysilicon-based passivation layers for silicon solar cells," Solar Energy Materials and Solar Cells, vol. 215, p. 110691, 2020. pdf

T. C. Kho, K. C. Fong, M. Stocks, K. McIntosh, E. Franklin, S. P. Phang, W. Liang, and A. Blakers, "Excellent ONO passivation on phosphorus and boron diffusion demonstrating a 25% efficient IBC solar cell," Progress in Photovoltaics: Research and Applications, vol. 28, no. 10, pp. 1034-1044, 2020. pdf

M. A. Mahmud, T. Duong, Y. Yin, J. Peng, Y. Wu, T. Lu, H. T. Pham, H. Shen, D. Walter, and H. T. Nguyen, "In Situ Formation of Mixed‐Dimensional Surface Passivation Layers in Perovskite Solar Cells with Dual‐Isomer Alkylammonium Cations," Small, p. 2005022, 2020. pdf

N. Mozaffari, H. Shen, Y. Yin, Y. Li, D. Hiller, D. A. Jacobs, H. T. Nguyen, P. Phang, G. G. Andersson, and U. Kaiser, "Efficient Passivation and Low Resistivity for p+-Si/TiO2 Contact by Atomic Layer Deposition," ACS Applied Energy Materials, vol. 3, no. 7, pp. 6291-6301, 2020. pdf

H. T. Nguyen, S. Gerritsen, M. A. Mahmud, Y. Wu, Z. Cai, T. Truong, M. Tebyetekerwa, T. Duong, J. Peng, and K. Weber, "Spatially and Spectrally Resolved Absorptivity: New Approach for Degradation Studies in Perovskite and Perovskite/Silicon Tandem Solar Cells," Advanced Energy Materials, vol. 10, no. 4, p. 1902901, 2020. pdf

F. E. Rougieux, C. Sun, and M. Juhl, "Light-induced-degradation defect independent of the boron concentration: Towards unifying admittance spectroscopy, photoluminescence and photoconductance lifetime spectroscopy results," Solar Energy Materials and Solar Cells, vol. 210, p. 110481, 2020. pdf

A. Sharma, L. Zhang, J. O. Tollerud, M. Dong, Y. Zhu, R. Halbich, T. Vogl, K. Liang, H. T. Nguyen, and F. Wang, "Super-transport of Excitons in Atomically Thin Organic Semiconductors at the 2D Quantum Limit," arXiv preprint arXiv:2002.02623, 2020. pdf

H. C. Sio, D. Kang, X. Zhang, J. Yang, J. Jin, and D. Macdonald, "The Role of Dark Annealing in Light and Elevated Temperature Induced Degradation in p-Type Mono-Like Silicon," IEEE Journal of Photovoltaics, 2020. pdf

M. Tebyetekerwa, Y. Cheng, J. Zhang, W. Li, H. Li, G. P. Neupane, B. Wang, T. N. Truong, C. Xiao, and M. M. Al-Jassim, "Emission Control from Transition Metal Dichalcogenide Monolayers by Aggregation-Induced Molecular Rotors," ACS nano, 2020. pdf

M. Tebyetekerwa, J. Zhang, Z. Xu, T. N. Truong, Z. Yin, Y. Lu, S. Ramakrishna, D. Macdonald, and H. T. Nguyen, "Mechanisms and Applications of Steady-State Photoluminescence Spectroscopy in Two-Dimensional Transition-Metal Dichalcogenides," ACS nano, 2020. pdf

T. N. Truong, D. Yan, W. Chen, W. Wang, H. Guthrey, M. Al-Jassim, A. Cuevas, D. Macdonald, and H. T. Nguyen, "Deposition pressure dependent structural and optoelectronic properties of ex-situ boron-doped poly-Si/SiOx passivating contacts based on sputtered silicon," Solar Energy Materials and Solar Cells, vol. 215, p. 110602, 2020. pdf

W. Wang, J. He, D. Yan, C. Samundsett, S. P. Phang, Z. Huang, W. Shen, J. Bullock, and Y. Wan, "21.3%-efficient n-type silicon solar cell with a full area rear TiOx/LiF/Al electron-selective contact," Solar Energy Materials and Solar Cells, vol. 206, p. 110291, 2020. pdf

H. Wu, H. T. Nguyen, L. Black, A. Liu, R. Liu, W. Chen, D. Kang, W. Yang, and D. Macdonald, "A Correlative Study of Film Lifetime, Hydrogen Content, and Surface Passivation Quality of Amorphous Silicon Films on Silicon Wafers," IEEE Journal of Photovoltaics, vol. 10, no. 5, pp. 1307-1312, 2020. pdf

H. Wu, H. T. Nguyen, D. Yan, J. Stuckelberger, W. Chen, W. Wang, and D. Macdonald, "Micro-photoluminescence studies of shallow phosphorus diffusions below polysilicon passivating contacts," Solar Energy Materials and Solar Cells, vol. 218, p. 110780, 2020. pdf

K. Xiao, R. Lin, Q. Han, Y. Hou, Z. Qin, H. T. Nguyen, J. Wen, M. Wei, V. Yeddu, and M. I. Saidaminov, "All-perovskite tandem solar cells with 24.2% certified efficiency and area over 1 cm 2 using surface-anchoring zwitterionic antioxidant," Nature Energy, vol. 5, no. 11, pp. 870-880, 2020. pdf

J. Yu, P. Phang, C. Samundsett, R. Basnet, G. P. Neupane, X. Yang, D. MacDonald, Y. Wan, D. Yan, and J. Ye, "Titanium Nitride Electron-Conductive Contact for Silicon Solar Cells By RF Sputtering from a TiN Target," ACS Applied Materials & Interfaces, 2020. pdf

Y. Zhu, C. Sun, T. Niewelt, G. Coletti, and Z. Hameiri, "Investigation of two-level defects in injection dependent lifetime spectroscopy," Solar Energy Materials and Solar Cells, vol. 216, p. 110692, 2020. pdf

2019

Journal papers

R. Basnet, S. P. Phang, C. Samundsett, D. Yan, W. Liang, C. Sun, S. Armand, R. Einhaus, J. Degoulange, and D. Macdonald, "22.6% Efficient Solar Cells with Poly‐Silicon Passivating Contacts on n‐Type Solar‐Grade Wafers," Solar RRL, vol. 3, p. 1900297, 2019. pdf

R. Basnet, W. Weigand, J. Y. Zhengshan, C. Sun, S. P. Phang, H. C. Sio, F. E. Rougieux, Z. C. Holman, and D. Macdonald, "Impact of pre-fabrication treatments on n-type UMG wafers for 21% efficient silicon heterojunction solar cells," Solar Energy Materials and Solar Cells 2019, p. 110287. pdf

L. E. Black and D. H. Macdonald, "Accounting for the Dependence of Coil Sensitivity on Sample Thickness and Lift-Off in Inductively Coupled Photoconductance Measurements," IEEE Journal of Photovoltaics 2019, vol. 9, pp. 1563-1574. pdf

J. Bullock, Y. Wan, M. Hettick, X. Zhaoran, S. P. Phang, D. Yan, H. Wang, W. Ji, C. Samundsett, and Z. Hameiri, "Dopant‐Free Partial Rear Contacts Enabling 23% Silicon Solar Cells," Advanced Energy Materials 2019, vol. 9, p. 1803367. pdf

B. Chen, J. Peng, H. Shen, T. Duong, D. Walter, S. Johnston, M. M. Al‐Jassim, K. J. Weber, T. P. White, and K. R. Catchpole, "Imaging Spatial Variations of Optical Bandgaps in Perovskite Solar Cells," Advanced Energy Materials 2019, vol. 9, p. 1802790. pdf

H. Chen, M. Zhang, X. Fu, Z. Fusco, R. Bo, B. Xing, H. T. Nguyen, C. Barugkin, J. Zheng, and C. F. J. Lau, "Light-activated inorganic CsPbBr 2 I perovskite for room-temperature self-powered chemical sensing," Physical Chemistry Chemical Physics 2019, vol. 21, pp. 24187-24193. pdf

A. Liu, C. Sun, H. C. Sio, X. Zhang, H. Jin, and D. Macdonald, "Gettering of transition metals in high-performance multicrystalline silicon by silicon nitride films and phosphorus diffusion," Journal of Applied Physics 2019, vol. 125, p. 043103. pdf

H. T. Nguyen, Z. Li, Y.-J. Han, R. Basnet, M. Tebyetekerwa, T. N. Truong, H. Wu, D. Yan, and D. Macdonald, "Contactless, nondestructive determination of dopant profiles of localized boron-diffused regions in silicon wafers at room temperature," Scientific reports 2019, vol. 9, pp. 1-8. pdf

F. E. Rougieux, W. Kwapil, F. Heinz, M. Siriwardhana, and M. C. Schubert, "Contactless transient carrier spectroscopy and imaging technique using lock-in free carrier emission and absorption," Scientific reports 2019, vol. 9, pp. 1-5. pdf

H. C. Sio, A. Fell, S. P. Phang, H. Wang, P. Zheng, D. Chen, X. Zhang, T. Zhang, H. Jin, and D. Macdonald, "3-D Modeling of Multicrystalline Silicon Materials and Solar Cells," IEEE Journal of Photovoltaics 2019. pdf

H. C. Sio, S. P. Phang, A. Fell, H. Wang, P. Zheng, D. Chen, X. Zhang, T. Zhang, Q. Wang, and H. Jin, "The electrical properties of high performance multicrystalline silicon and mono-like silicon: Material limitations and cell potential," Solar Energy Materials and Solar Cells 2019, vol. 201, p. 110059. pdf

H. C. Sio, S. P. Phang, H. T. Nguyen, Z. Hameiri, and D. Macdonald, "Hydrogenation in multicrystalline silicon: The impact of dielectric film properties and firing conditions," Progress in Photovoltaics: Research and Applications, 2019. https://doi.org/10.1002/pip.3199 pdf

C. Sun, D. Chen, F. Rougieux, R. Basnet, B. Hallam, and D. Macdonald, "Kinetics and dynamics of the regeneration of boron-oxygen defects in compensated n-type silicon," Solar Energy Materials and Solar Cells 2019, vol. 195, pp. 174-181. pdf

C. Sun, A. Liu, A. Samadi, C. Chan, A. Ciesla, and D. Macdonald, "Transition Metals in a Cast‐Monocrystalline Silicon Ingot Studied by Silicon Nitride Gettering," physica status solidi (RRL)–Rapid Research Letters 2019, p. 1900456. pdf

C. Sun, W. Weigand, J. Shi, Z. Yu, R. Basnet, S. P. Phang, Z. C. Holman, and D. Macdonald, "Origins of hydrogen that passivates bulk defects in silicon heterojunction solar cells," Applied Physics Letters, vol. 115, no. 25, p. 252103, 2019. pdf

M. Tebyetekerwa, J. Zhang, K. Liang, T. Duong, G. P. Neupane, L. Zhang, B. Liu, T. N. Truong, R. Basnet, and X. Qiao, "Quantifying Quasi‐Fermi Level Splitting and Mapping its Heterogeneity in Atomically Thin Transition Metal Dichalcogenides," Advanced Materials 2019, vol. 31, p. 1900522. pdf

T. N. Truong, D. Yan, W. Chen, M. Tebyetekerwa, M. Young, M. Al-Jassim, A. Cuevas, D. Macdonald, and H. T. Nguyen, "Hydrogenation mechanisms of poly‐Si/SiOx passivating contacts by different capping layers," Solar RRL, p. 1900476, 2019. pdf

T. N. Truong, D. Yan, C. Samundsett, R. Basnet, M. Tebyetekerwa, L. Li, F. Kremer, A. Cuevas, D. Macdonald, and H. T. Nguyen, "Hydrogenation of phosphorus-doped polycrystalline silicon films for passivating contact solar cells," ACS applied materials & interfaces 2019, vol. 11, pp. 5554-5560. pdf

T. N. Truong, D. Yan, C. Samundsett, A. Liu, S. P. Harvey, M. R. Young, Z. Ding, M. Tebyetekerwa, F. Kremer, and M. M. Al-Jassim, "Hydrogen-assisted defect engineering of doped poly-Si films for passivating contact solar cells," ACS Applied Energy Materials 2019. https://doi.org/10.1021/acsaem.9b01771 pdf

W. Wang, J. He, D. Yan, C. Samundsett, S. P. Phang, Z. Huang, W. Shen, J. Bullock, and Y. Wan, "21.3%-efficient n-type silicon solar cell with a full area rear TiOx/LiF/Al electron-selective contact," Solar Energy Materials and Solar Cells 2019, p. 110291. pdf

D. Yan, S. P. Phang, Y. Wan, C. Samundsett, D. Macdonald, and A. Cuevas, "High efficiency n-type silicon solar cells with passivating contacts based on PECVD silicon films doped by phosphorus diffusion," Solar Energy Materials and Solar Cells 2019, vol. 193, pp. 80-84. pdf

I. Yang, Z. Li, J. Wong-Leung, Y. Zhu, Z. Li, N. Gagrani, L. Li, M. N. Lockrey, H. Nguyen, and Y. Lu, "Multi-wavelength Single Nanowire InGaAs/InP Quantum Well Light Emitting Diodes," Nano Lett. 2019, 19, 6, 3821-3829. pdf

J. Yu, M. Liao, D. Yan, Y. Wan, H. Lin, Z. Wang, P. Gao, Y. Zeng, B. Yan, and J. Ye, "Activating and optimizing evaporation-processed magnesium oxide passivating contact for silicon solar cells," Nano Energy 2019, vol. 62, pp. 181-188. pdf

J. Zhang, B. Wang, M. Tebyetekerwa, Y. Zhu, B. Liu, H. T. Nguyen, S. Tian, Y. Zhang, and Y. Lu, "Aluminium and zinc co-doped CuInS 2 QDs for enhanced trion modulation in monolayer WS 2 toward improved electrical properties," Journal of Materials Chemistry C 2019, vol. 7, pp. 15074-15081. pdf

Conference papers

L. E. Black and E. Kessels, "Dependence of coil sensitivity on sample thickness in inductively coupled photoconductance measurements," in AIP Conference Proceedings, 2019, p. 020002. pdf

R. Post, T. Niewelt, W. Yang, D. Macdonald, W. Kwapil, and M. C. Schubert, "Re-evaluation of the SRH-parameters for the FeGa defect," in AIP Conference Proceedings, 2019, p. 020012. pdf

R. Basnet, S. P. Phang, C. Samundsett, D. Yan,  C. Sun,  HT. Nguyen, F. E. Rougieux, and D. Macdonald, “Elucidating the role of the thermal budget on the bulk degradation of n-type Czochralski-grown upgraded metallurgical-grade silicon wafers during the processing of phosphorus-doped polysilicon cells,” presented in 36th EU PVSEC, Marseille, France, 2019. pdf

D. Kang, H. C. Sio, X. Zhang, Q. Wang, H. Jin, D. Macdonald, “LeTID in p-type and n-type mono-like and float-zone silicon, and their dependence on sinx film properties,” presented in 36th EU PVSEC, Marseille, France, 2019. pdf

M. Juhl, F. Heinz, G. Coletti, F. Rougieux, C. Sun, T. Niewelt, J. Krich, D. MacDonald, and M. Schubert, "Insights on the electronic parameterisation of defects in silicon obtained from the formation of the defect repository," presented in 36th EU PVSEC, Marseille, France, 2019. pdf

M. Tebyetekerwa, D. Macdonald, and H. T. Nguyen, "Predicting Open-Circuit Voltages in Atomically-Thin Monolayer Transition Metal Dichalcogenides-Based Solar Cells," presented IEEE PVSC-46, Chicago, 2019. pdf

2018

Journal papers

R. Basnet, C. Sun, H. Wu, H. T. Nguyen, F. E. Rougieux, and D. Macdonald, "Ring defects in n-type Czochralski-grown silicon: A high spatial resolution study using Fourier-transform infrared spectroscopy, micro-photoluminescence, and micro-Raman," Journal of Applied Physics 2018, vol. 124, p. 243101. pdf

A. Liu, Z. Hameiri, Y. Wan, C. Sun, and D. Macdonald, "Gettering Effects of Silicon Nitride Films From Various Plasma-Enhanced Chemical Vapor Deposition Conditions," IEEE Journal of Photovoltaics, pp. 1-4, 2018. pdf

W. S. Wong, T. Gengenbach, H. T. Nguyen, X. Gao, V. S. Craig, and A. Tricoli, "Dynamically GasPhase Switchable Super (de) wetting States by Reversible Amphiphilic Functionalization: A Powerful Approach for Smart Fluid Gating Membranes," Advanced Functional Materials, vol. 28, p. 1704423, 2018. pdf

I. Yang, X. Zhang, C. Zheng, Q. Gao, Z. Li, L. Li, et al., "Radial Growth Evolution of InGaAs/InP Multi-Quantum Well Nanowires grown by Selective-Area Metal Organic Vapor Phase Epitaxy," ACS nano, 2018. pdf

P. P. Altermatt, Z. Xiong, Q. He, W. Deng, F. Ye, Y. Yang, et al., "High-performance p-type multicrystalline silicon (mc-Si): Its characterization and projected performance in PERC solar cells," Solar Energy, 2018. pdf

R. Basnet, F. E. Rougieux, C. Sun, S. P. Phang, C. Samundsett, R. Einhaus, et al., "Methods to Improve Bulk Lifetime in n-Type Czochralski-Grown Upgraded Metallurgical-Grade Silicon Wafers," IEEE Journal of Photovoltaics, pp. 1-7, 2018. pdf

A. Cuevas, Y. Wan, D. Yan, C. Samundsett, T. Allen, X. Zhang, et al., "Carrier population control and surface passivation in solar cells," Solar Energy Materials and Solar Cells, vol. 184, pp. 38-47, 2018. pdf

I. Haedrich, M. Ernst, A. Thomson, P. Zheng, X. Zhang, H. Jin, et al., "How cell textures impact angular cell-to-module ratios and the annual yield of crystalline solar modules," Solar Energy Materials and Solar Cells, vol. 183, pp. 181-192, 2018. pdf

A. Liu and D. Macdonald, "Impurity Gettering by Atomic‐Layer‐Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures," physica status solidi (RRL)–Rapid Research Letters, vol. 12, p. 1700430, 2018. pdf

A. Liu, D. Yan, S. P. Phang, A. Cuevas, and D. Macdonald, "Effective impurity gettering by phosphorus-and boron-diffused polysilicon passivating contacts for silicon solar cells," Solar Energy Materials and Solar Cells, vol. 179, pp. 136-141, 2018. pdf

A. Liu, D. Yan, J. Wong-Leung, L. Li, S. P. Phang, A. Cuevas, et al., "Direct Observation of the Impurity Gettering Layers in Polysilicon-Based Passivating Contacts for Silicon Solar Cells," ACS Applied Energy Materials, vol. 1, pp. 2275-2282, 2018. pdf

H. Nguyen, A. Liu, D. Yan, H. L. Guthrey, T. N. Truong, M. Tebyetekerwa, et al., "Sub-Bandgap Luminescence from Doped Poly and Amorphous Silicon Films and Its Application to Understanding Passivating-Contact Solar Cells," ACS Applied Energy Materials, 2018. pdf

T. Niewelt, A. Richter, T. Kho, N. Grant, R. Bonilla, B. Steinhauser, et al., "Taking monocrystalline silicon to the ultimate lifetime limit," Solar Energy Materials and Solar Cells, vol. 185, pp. 252-259, 2018. pdf

T. Rahman, H. T. Nguyen, A. Tarazona, J. Shi, Y.-J. Han, E. Franklin, et al., "Characterization of Epitaxial Heavily Doped Silicon Regions Formed by Hot-Wire Chemical Vapor Deposition Using Micro-Raman and Microphotoluminescence Spectroscopy," IEEE Journal of Photovoltaics, vol. 8, pp. 813-819, 2018. pdf

F. E. Rougieux, C. Sun, and D. Macdonald, "Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review," Solar Energy Materials and Solar Cells, vol. 187, pp. 263-272, 2018/12/01/ 2018. pdf

H. C. Sio, H. Wang, Q. Wang, C. Sun, W. Chen, H. Jin, et al., "Light and elevated temperature induced degradation in p-type and n-type cast-grown multicrystalline and mono-like silicon," Solar Energy Materials and Solar Cells, vol. 182, pp. 98-104, 2018. pdf

C. Sun, D. Chen, W. Weigand, R. Basnet, S. P. Phang, B. Hallam, et al., "Complete regeneration of BO-related defects in n-type upgraded metallurgical-grade Czochralski-grown silicon heterojunction solar cells," Applied Physics Letters, vol. 113, p. 152105, 2018. pdf

Y. Wan, J. Bullock, M. Hettick, Z. Xu, C. Samundsett, D. Yan, et al., "Temperature and Humidity Stable Alkali/AlkalineEarth Metal Carbonates as Electron Heterocontacts for Silicon Photovoltaics," Advanced Energy Materials, p. 1800743, 2018. pdf

Y. Wan, J. Bullock, M. Hettick, Z. Xu, D. Yan, J. Peng, et al., "Zirconium oxide surface passivation of crystalline silicon," Applied Physics Letters, vol. 112, p. 201604, 2018. pdf

Y. Wan, P. C. Hsiao, W. Zhang, A. Lennon, Y. Chen, Z. Feng, et al., "LaserPatterned nType FrontJunction Silicon Solar Cell With Tantalum Oxide/Silicon Nitride Passivation and Antireflection," Solar RRL, vol. 2, p. 1700187, 2018. pdf

H. Wu, H. T. Nguyen, A. Liu, and D. Macdonald, "Reconstructing photoluminescence spectra at liquid nitrogen temperature from heavily borondoped regions of crystalline silicon solar cells," Progress in Photovoltaics: Research and Applications, vol. 26, pp. 587-596, 2018. pdf

D. Yan, A. Cuevas, S. P. Phang, Y. Wan, and D. Macdonald, "23% efficient p-type crystalline silicon solar cells with hole-selective passivating contacts based on physical vapor deposition of doped silicon films," Applied Physics Letters, vol. 113, p. 061603, 2018. pdf

L. Zhang, A. Sharma, Y. Zhu, Y. Zhang, B. Wang, M. Dong, et al., "Efficient and LayerDependent Exciton Pumping across Atomically Thin Organic–Inorganic TypeI Heterostructures," Advanced Materials, vol. 30, p. 1803986, 2018. pdf

ARENA Project RND009 - Report on key failure modes of PV modules in the field. pdf

Conference papers

M. Goodarzi, R. A. Sinton, and D. Macdonald, "Improving transient photoconductance lifetime measurements on ingots with deeper photogeneration," in AIP Conference Proceedings, 2018, p. 020008. pdf

H. Sio, S. P. Phang, A. Fell, H. Wang, P. Zheng, DK Chen, X. Zhang, T. Zhang, H. Jin, and D. Macdonald, “The electrical properties of high performance multicrystalline silicon: Material limitation and cell potential,” presented in 28th Annual NREL Silicon Workshop, August 2018, Winter Park, Colorado. pdf

2017

Journal papers

J. Cui, S. P. Phang, H. C. Sio, Y. Wan, Y. Chen, P. Verlinden, et al., "Passivation of Phosphorus Diffused Black Multi‐Crystalline Silicon by Hafnium Oxide," physica status solidi (RRL)–Rapid Research Letters, vol. 11, p. 1700296, 2017. pdf

Y. Wu, D. Yan, J. Peng, Y. Wan, S. P. Phang, H. Shen, et al., "Monolithic perovskite/silicon-homojunction tandem solar cell with over 22% efficiency," Energy & Environmental Science, vol. 10, pp. 2472-2479, 2017. pdf

W. Yang, A. Akey, L. Smillie, J. Mailoa, B. Johnson, J. McCallum, et al., "Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si," Physical Review Materials, vol. 1, p. 074602, 2017. pdf

Y. Wan, S. K. Karuturi, C. Samundsett, J. Bullock, M. Hettick, D. Yan, et al., "Tantalum Oxide Electron-Selective Heterocontacts for Silicon Photovoltaics and Photoelectrochemical Water Reduction," ACS Energy Letters, vol. 3, pp. 125-131, 2017. pdf

H. T. Nguyen, S. Johnston, R. Basnet, H. Guthrey, P. Dippo, H. Zhang, et al., "Imaging the Thickness of Passivation Layers for Crystalline Silicon with Micron‐Scale Spatial Resolution Using Spectral Photoluminescence," Solar RRL, vol. 1, p. 1700157, 2017. pdf

D. Chung, B. Mitchell, M. Goodarzi, C. Sun, D. Macdonald, and T. Trupke, "Bulk Lifetimes up to 20 ms Measured on Unpassivated Silicon Discs Using Photoluminescence Imaging," IEEE Journal of Photovoltaics, vol. 7, pp. 444-449, 2017. pdf

H. T. Nguyen, S. Johnston, A. Paduthol, S. P. Harvey, S. P. Phang, C. Samundsett, C. Sun, D. Yan, T. Trupke, M. M. Al-Jassim, and D. Macdonald, “Quantification of sheet resistance in boron-diffused silicon using micro-photoluminescence spectroscopy at room temperature,” Solar RRL, 2017. pdf

Y.-J. Han, E. Franklin, D. Macdonald, H. T. Nguyen, and D. Yan, “Determination of dopant density profiles of heavily boron-doped silicon from low temperature micro-photoluminescence spectroscopy,” IEEE Journal of Photovoltaics, 2017. pdf

M. Goodarzi, R. A. Sinton, H. Jin, P. T. Zheng, W. Chen, Q. Z. Wang, and D. Macdonald, "Accuracy of Interstitial Iron Measurements on P-Type Multicrystalline Silicon Blocks by Quasi-Steady-State Photoconductance," IEEE Journal of Photovoltaics, vol. 7, pp. 1216-1223, Sep 2017. pdf

S. P. Phang, H. C. Sio, C. F. Yang, C. W. Lan, Y. M. Yang, A. W. H. Yu, B. S. L. Hsu, C. W. C. Hsu, and D. Macdonald, "N-type high-performance multicrystalline and mono-like silicon wafers with lifetimes above 2ms," Japanese Journal of Applied Physics, vol. 56, Aug 2017. pdf

D. Shen, C. Sun, P. T. Zheng, D. Macdonald, and F. Rougieux, "Carrier induced degradation in compensated n-type silicon solar cells: Impact of light-intensity, forward bias voltage, and temperature on the reaction kinetics," Japanese Journal of Applied Physics, vol. 56, Aug 2017. pdf

H. C. Sio, S. P. Phang, P. T. Zheng, Q. Z. Wang, W. Chen, H. Jin, and D. Macdonald, "Recombination sources in p-type high performance multicrystalline silicon," Japanese Journal of Applied Physics, vol. 56, Aug 2017. pdf

C. Sun, H. T. Nguyen, H. C. Sio, F. E. Rougieux, and D. Macdonald, "Activation Kinetics of the Boron-oxygen Defect in Compensated n- and p-type Silicon Studied by High-Injection Micro-Photoluminescence," IEEE Journal of Photovoltaics, vol. 7, pp. 988-995, Jul 2017. pdf

A. Y. Liu and D. Macdonald, "Impurity gettering effect of atomic layer deposited aluminium oxide films on silicon wafers," Applied Physics Letters, vol. 110, May 2017. pdf

F. E. Rougieux, H. T. Nguyen, D. H. Macdonald, B. Mitchell, and R. Falster, "Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon," IEEE Journal of Photovoltaics, vol. 7, pp. 735-740, May 2017. pdf

H. T. Nguyen, M. A. Jensen, L. Li, C. Samundsett, H. C. Sio, B. Lai, T. Buonassisi, and D. Macdonald, "Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers," IEEE Journal of Photovoltaics, vol. 7, pp. 772-780, May 2017. pdf

A. Y. Liu, H. T. Nguyen, and D. Macdonald, "Photoluminescence Spectra of Moderately Doped, Compensated Silicon Si:P,B at 79-300 K," IEEE Journal of Photovoltaics, vol. 7, pp. 581-589, Mar 2017. pdf

H. T. Nguyen, S. Mokkapati, and D. Macdonald, "Detecting Dopant Diffusion Enhancement at Grain Boundaries in Multicrystalline Silicon Wafers With Microphotoluminescence Spectroscopy," IEEE Journal of Photovoltaics, vol. 7, pp. 598-603, Mar 2017. pdf

C. Sun, H. T. Nguyen, F. E. Rougieux, and D. Macdonald, "Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging," Journal of Crystal Growth, vol. 460, pp. 98-104, Feb 2017. pdf

H. C. Sio, S. P. Phang, and D. Macdonald, "Imaging Surface Recombination Velocities of Grain Boundaries in Multicrystalline Silicon Wafers via Photoluminescence," Solar RRL, vol. 1, Jan 2017. pdf

P. T. Zheng, F. E. Rougieux, X. Y. Zhang, J. Degoulange, R. Einhaus, P. Rivat, and D. H. Macdonald, "21.1% UMG Silicon Solar Cells," IEEE Journal of Photovoltaics, vol. 7, pp. 58-61, Jan 2017. pdf

H. T. Nguyen and D. Macdonald, "On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation," Journal of Luminescence, vol. 181, pp. 223-229, Jan 2017. pdf

Conference papers

M. Goodarzi, R. Sinton, D. Chung, B. Mitchell, T. Trupke, and D. Macdonald, “A comparison between quasi-steady state and transient photoconductance lifetimes in silicon ingots: simulations and measurements,” presented in IEEE PVSC-44, Washington, DC, 2017. pdf

2016

Journal papers

S. P. Phang, H. C. Sio, and D. Macdonald, "Applications of carrier de-smearing of photoluminescence images on silicon wafers," Progress in Photovoltaics, vol. 24, pp. 1547-1553, Dec 2016. pdf

H. T. Nguyen, S. P. Phang, J. Wong-Leung, and D. Macdonald, "Photoluminescence Excitation Spectroscopy of Diffused Layers on Crystalline Silicon Wafers," IEEE Journal of Photovoltaics, vol. 6, pp. 746-753, May 2016. pdf

A. Y. Liu, C. Sun, V. P. Markevich, A. R. Peaker, J. D. Murphy, and D. Macdonald, "Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films," Journal of Applied Physics, vol. 120, Nov 2016. pdf

A. Y. Liu, H. T. Nguyen, and D. Macdonald, "Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K," Physica Status Solidi A-Applications and Materials Science, vol. 213, pp. 3029-3032, Nov 2016. pdf

C. Sun, F. E. Rougieux, J. Degoulange, R. Einhaus, and D. Macdonald, "Reassessment of the recombination properties of aluminium-oxygen complexes in n- and p-type Czochralski-grown silicon," Physica Status Solidi B-Basic Solid State Physics, vol. 253, pp. 2079-2084, Oct 2016. pdf

F. Rougieux, C. Samundsett, K. C. Fong, A. Fell, P. T. Zheng, D. Macdonald, J. Degoulange, R. Einhaus, and M. Forster, "High efficiency UMG silicon solar cells: impact of compensation on cell parameters," Progress in Photovoltaics, vol. 24, pp. 725-734, May 2016. pdf

P. Zheng, F. E. Rougieux, C. Samundsett, X. B. Yang, Y. M. Wan, J. Degoulange, R. Einhaus, P. Rivat, and D. Macdonald, "Upgraded metallurgical-grade silicon solar cells with efficiency above 20%," Applied Physics Letters, vol. 108, Mar 2016. pdf

H. C. Sio, T. K. Chong, S. R. Surve, K. J. Weber, and D. H. Macdonald, "Characterizing the Influence of Crystal Orientation on Surface Recombination in Silicon Wafers," IEEE Journal of Photovoltaics, vol. 6, pp. 412-418, Mar 2016. pdf

H. C. Sio and D. Macdonald, "Direct comparison of the electrical properties of multicrystalline silicon materials for solar cells: conventional p-type, n-type and high performance p-type," Solar Energy Materials and Solar Cells, vol. 144, pp. 339-346, Jan 2016. pdf

Young-Joon Han, Evan Franklin, Andreas Fell, Marco Ernst, Hieu T. Nguyen, and Daniel Macdonald, "Low-temperature micro-photoluminescence spectroscopy on laser-doped silicon with different surface conditions", Applied Physics A 122 (4), pp. 1-10 (2016). pdf

Hieu T. Nguyen, Sieu Pheng Phang, Jennifer Wong-Leung, and Daniel Macdonald, "Photoluminescence excitation spectroscopy of diffused layers on crystalline silicon wafers", IEEE Journal of Photovoltaics (2016). pdf

Hieu T Nguyen, Fiacre E Rougieux, Di Yan, Yimao Wan, Sudha Mokkapati, Silvia Martin de Nicolas, Johannes Peter Seif, Stefaan De Wolf, Daniel Macdonald, "Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline silicon solar cells using micro-photoluminescence spectroscopy", Solar Energy Materials and Solar Cells 145, pp. 403-411 (2016). pdf

Conference papers

P. T. Zheng, F. E. Rougieux, C. Samundsett, X. B. Yang, Y. M. Wan, J. Degoulange, R. Einhaus, P. Rivat, and D. Macdonald, "Simulation of 20.96% efficiency n-type Czochralski UMG silicon solar cell," in Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics, 2016, pp. 434-442. pdf

A. Y. Liu, H. T. Nguyen, and D. Macdonald, "Silicon luminescence spectra modelling and the impact of dopants," in Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics, 2016, pp. 852-856. pdf

C. Sun, H. T. Nguyen, F. E. Rougieux, and D. Macdonald, "Characterization of Cu and Ni precipitates in n- and p-type Czochralski-grown silicon by photoluminescence," in Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics, 2016, pp. 880-885. pdf

H. T. Nguyen, S. P. Phang, and D. Macdonald, "Evaluating depth distributions of dislocations in silicon wafers using micro-photoluminescence excitation spectroscopy," in Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics, 2016, pp. 145-152. pdf

M. Goodarzi, D. Chung, B. Mitchell, T. Trupke, R.A. Sinton, and D. Macdonald, “Modeling and characterization of multicrystalline silicon blocks by quasi-steady-state photoconductance,” presented in 34th EU PVSEC, Munich, Germany, 2016. pdf


 

2015

Journal papers

Carsten Schinke, P. Christian Peest, Jan Schmidt, Rolf Brendel, Karsten Bothe, Malte R. Vogt, Ingo Kröger, Stefan Winter, Alfred Schirmacher, Siew Lim, Hieu T. Nguyen, Daniel MacDonald, "Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon", AIP Advances 5, pp. 067168 (2015). pdf

Chang Sun, AnYao Liu, Sieu Pheng Phang, Fiacre E. Rougieux, Daniel Macdonald, "Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon", Journal of Applied Physics 118, pp. 085709 (2015). pdf

Hieu T. Nguyen, Young Han, Marco Ernst, Andreas Fell, Evan Franklin, Daniel Macdonald, "Dislocations in laser-doped silicon detected by micro-photoluminescence spectroscopy", Applied Physics Letters 107, pp. 022101 (2015). pdf

Chog Barugkin, Jinjin Cong, The Duong, Shakir Rahman, Hieu T. Nguyen, Daniel Macdonald, Thomas P. White and Kylie R. Catchpole, “Ultralow absorption coefficient and temperature dependence of radiative recombination of CH3NH3PBI3 perovskite from photoluminescence”, The Journal of Physical Chemistry Letters 6(5), pp. 767-772 (2015). pdf

Fiacre E. Rougieux, Nicholas E. Grant, Chog Barugkin, Daniel Macdonald and John D. Murphy, “Influence of annealing and bulk hydrogenation on lifetime-limiting defects in nitrogen-doped floating zone silicon”, IEEE Journal of Photovoltaics 5 (2), pp. 495-498 (2015). pdf

Hieu T. Nguyen, Di Yan, Fan Wang, Peiting Zheng, Young Han and Daniel Macdonald,“Micro-photoluminescence spectroscopy on heavily-doped layers of silicon solar cells”, Phy. Status Solidi RRL 9 (4), pp. 230-235 (2015).pdf

Hieu T. Nguyen, Fiacre Rougeiux, Simeon C. Baker-Finch and Daniel Macdonald, “Impact of carrier profile and rear-side reflection on photoluminescence spectra in planar crystalline silicon wafers at different temperatures”, IEEE Journal of Photovoltaics 5(1), pp. 77-80 (2015). pdf

N. E. Grant, F. E. Rougieux, D. Macdonald, J. Bullock and Y. Wan,“Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers”, Journal of Applied Physics 117 (5),055711(2015) pdf

Hieu T. Nguyen, Fiacre Rougeiux, Fan Wang, Hoe Tan and Daniel Macdonald,“Micrometer-scale deep-level spectral photoluminescence from dislocations in multicrystalline silicon”, IEEE Journal of Photovoltaics 5 (3), pp. 799-804 (2015).pdf

Chang Sun, Fiacre E. Rougieux and Daniel Macdonald,“A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon”, Journal of Applied Physics 117, 045702 (2015).pdf

Conference papers

Daniel Macdonald , AnYao Liu, Hieu T. Nguyen, Siew Yee Lim, Fiacre E. Rougieux, “Physical Modelling of Luminescence Spectra from Crystalline Silicon”, 31st European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany (2015). pdf

AnYao Liu, Chang Sun, Daniel Macdonald, “Hydrogen passivation of Interstitial Iron in Silicon by Annealing with PECVD Silicon Nitride Films”, 31st European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany (2015). pdf

Hang Sio, Sieu Pheng Phang Hieu T. Nguyen, Di Yan, Thorsten Trupke, Daniel Macdonald, “Comparison of Recombination Activity of Grain Boundaries in Various Multicrystalline Silicon Materials”, 31st European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany (2015). pdf

Sieu Pheng Phang, Hang Sio, Daniel Macdonald,“Application of Carrier De-Smearing of Photoluminescence Images on Silicon Wafers”, 31st European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany (2015). pdf

Carsten Schinke, P Christian Peest, Karsten Bothe, Jan Schmidt, Rolf Brendel, Malte R Vogt, Ingo Kröger, Stefan Winter, Alfred Schirmacher, Siew Lim, Hieu T Nguyen, Daniel Macdonald, “Experimental determination of the uncertainty of the absorption coefficient of crystalline silicon”, SiliconPV 2015, Konstanz, Germany, published in Energy Procedia 77 pp. 170-178 (2015). pdf

Nicholas E. Grant, Fiacre E. Rougieux and Daniel Macdonald, “Low temperature activation of grown-in defects limiting the lifetime of high purity n-type float-zone silicon wafers”, 16th Gettering and Defect Engineering in Semiconductor Technology Conference (GADEST), Bamburg, Germany (2015), published in Solid State Phenomena 242 pp. 120-125 (2016). pdf

Mohsen Goodarzi, Daniel Macdonald, Bernhard Mitchell, and R. A. Sinton, “Silicon ingot characterization by quasi-steady-state photoconductance”, 25th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes, Keystone CO, USA (2015). pdf

Hieu T. Nguyen, Fiacre E. Rougieux, Fan Wang, Daniel Macdonald, "Effects of solar cell processing steps on dislocation luminescence in multicrystalline silicon", 5th International Conference on Silicon Photovoltaics (SiliconPV), Konstanz, Germany (2015). pdf

Xinbo Yang, Andreas Fell, Evan Franklin, Lujia Xu, Daniel Macdonald, Klaus Weber,“N-type silicon solar cells with local back surface fields formed by laser chemical processing”, IEEE 42nd Photovoltaic Specialist Conference (PVSC), New Orleans, USA (2015).

Chan Sun, Anyao Liu, Fiacre E. Rougieux and Daniel Macdonald, “Lifetime spectroscopy and hydrogenation of chromium in n- and p- type Cz silicon”, 5th International Conference on Silicon Photovoltaics, SiliconPV, Konstanz, Germany (2015). pdf

Hieu T. Nguyen, Fiacre E. Rougieux, Fan Wang and Daniel Macdonald,“Effects of solar cell processing steps on dislocation luminescence in multicrystalline silicon”, 5th International Conference on Silicon Photovoltaics, SiliconPV, Konstanz, Germany (2015). pdf



2014

Journal papers

P. Zheng, F. E, Rougieux, N. E. Grant and Daniel Macdonald, “Evidence for vacancy-related recombination active defects in as-grown n-type Czochralski silicon”, IEEE Journal of Photovoltaics 5 (1), pp.183-188(2014) pdf

Daniel Macdonald, Sieu Pheng Phang and AnYao Liu, “External and internal gettering of interstitial iron in silicon solar cells”, Solid State Phenomena 205-206, pp. 26-33 (2014). pdf

T. Neiwelt, S. Y. Lim, J. Holtkamp, J. Schon, W. Warta, D. Macdonald and M.C. Schubert,“Interstitial oxygen imaging from thermal donor growth-A fast photoluminescence based method”, Solar Energy Materials and Solar Cells 131, pp.117-123 (2014). pdf

AnYao Liu and Daniel Macdonald, “Precipitation of interstitial iron in multicrystalline silicon”, Solid State Phenomena 205-206, pp. 34-39 (2014). pdf

Bernhard Mitchell, Jürgen W. Weber, Mattias Juhl, Daniel Macdonald and Thorsten Trupke, “Photoluminescence Imaging of Silicon Bricks”, Solid State Phenomena 205-206, pp. 118-127 (2014). pdf

AnYao Liu and Daniel Macdonald, “Precipitation of iron in multicrystalline silicon during annealing”, Journal of Applied Physics 115, 114901(2014). pdf

AnYao Liu, Chang Sun and Daniel Macdonald, “Hydrogen passivatin of interstitial iron in boron-doped multicrystalline silicon during annealing”, Journal of Applied Physics 116, 194902(2014). pdf

Bernhard Mitchell, Daniel Macdonald, Jonas Schon, Jurgen W. Weber, Hannes Wagner and Thorsten Trupke,“Imaging as-grown interstitial iron concentration on boron-doped silicon bricks via spectral photoluminescence”, IEEE Journal of Photovoltaics 4(5), pp. 1185-1196 (2014) pdf

Cyrus Ho, Josephine McKeon, Daniel Macdonald and Kylie Catchpole,“Three-dimensional nanotub submicrometer diffraction gratings for solar cells”, Appl. Opt 53(29) pp. 6840-6845 (2014). pdf

Daniel Walter, Andreas Fell, Evan Franklin, Daniel Macdonald, Bernhard Mitchell and Thorsten Trupke, “The impact of silicon CCD photon spread on quantitative analyses of luminescence images”, IEEE Journal of Photovoltaics 4(1), pp.368-373 (2014) pdf

F. E. Rougieux and D. Macdonald,“Reading data stored in the state of metastable defects in silicon using band-band photoluminescence: Proof of concept and physical limits to the data storage density”, Applied Physics Letters 104, 124103 (2014). pdf

Hieu T. Nyugen, Fiacre Rougieux, Bernhard Mitchell and Daniel Macdonald, “Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence”, Journal of Applied Physics 115, 043710 (2014) pdf

F. E. Rougieux, N. E. Grant and D. Macdonald,“Impact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers”, Energy Procedia 60, pp.81-84(2014) pdf

Hieu T. Nyugen, Simeon C. Baker-Finch and Daniel Macdonald, “Temperature dependence of the radiative recombination in crystalline silicon from spectral photoluminescence”, Applied Physics Letters 104, 112104 (2014) pdf

H. C. Sio, T. Trupke and D. Macdonald,“Quantifying carrier recombination at grain boundaries in multicrystalline silicon wafers through photoluminescence imaging”, Journal of Applied Physics 116, 244905 (2014). pdf

H. C. Sio, S. P. Phang, T. Trupke and D. Macdonald,“An accurate method for calibrating photoluminescence-based lifetime images on multi-crystalline silicon wafers”, Solar Energy Materials and Solar Cells 131, pp. 71-84 (2014). pdf

P. Zheng, F. E. Rougieux. D. Macdonald and A. Cuevas,“Measurement and parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level”, IEEE Journal of Photovoltaics 4(2), pp.560-565 (2014). pdf

Sieu Pheng Phang and Daniel Macdonald,“Effect of boron codoping and phosphorus concentration on phosphorus diffusion getting”, IEEE Journal of Photovoltais 4(1), pp.64-69 (2014). pdf

Chang Sun, Fiacre E. Rougieux and Daniel Macdonald,“Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon”, Journal of Applied Physics 115, 214907(2014). pdf

Bernhard Mitchell, Jurgen W. Weber, Mattias Juhl, Daniel Macdonald and Thorsten Trupke,“Photoluminescence imaging of silicon bricks”,Solid State Phenomena Vols 205-206, pp.118-127 (2014) pdf

Xinbo Yang, Ralph Muller, Avi Shalav, Lujia Xu, Wensheng Liang, Rui Zhang, Qunyu Bi, Klaus Weber, Daniel Macdonald and Robert Elliman,“Boron implanted, laser annealed P+ emitter for n-type interdigitated back-contact solar cells”,Energy Procedia 55, pp.320-325 (2014) pdf

Andreas Fell, Daniel Walter, Xinbo Yang, Sachin Surve, Evan Franklin, Klaus Weber and Daniel Macdonald,“Quantitative surface recombination imaging of single side processed silicon wafers obtained by photoluminescence modeling”, Energy Procedia 55, pp.63-70(2014). pdf

Hameiri, Z., Rougieux, F.E., Sinton, R., Trupke, T., “Contactless determination of the carrier mobility sum in silicon wafers using combined photoluminescence and photoconductance measurements”, Applied Physics Letters, 104(7)073506 (2014). pdf

Forster, M., Wagner, P., Degoulange, J., Einhaus, R., Galbiati, G., Rougieux, F.E., Cuevas, A., Fourmond, E., “Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells”, Solar Energy Materials and Solar Cell, 120, pp.390-395,(2014). pdf

Conference papers

Daniel Macdonald, AnYao Liu and Sieu Pheng Phang, “Gettering and hydrogenation of interstitial iron in silicon for solar cells”, Proceedings of the 7th Forum on the Science and Technology of Silicon Materials, Hamamatsu, Japan (2014), pp. 322-330. Invited presentation.

Bernhard Mitchell, Daniel Macdonald, Jonas Schon, Jurgen W. Weber and Thorsten Trupke,“Rapid assessment of as-grown interstitial iron concentration and impact of P-type silicon blocks via spectral photoluminescence imaging”, Proceedings of the 29th European Solar Energy Conference and Exhibition, Netherlands, Amsterdam, pp.560-563(2014) . pdf

Xinbo Yang, Ralph Muller, Avi Shalav, Lujia Xu, Wensheng Liang, Rui Zhang, Qunyu Bi, Klaus Weber, Daniel Macdonald and Robert Elliman,“Boron implanted, laser annealed P+ emitter for n-type interdigitated back-contact solar cells”,Proceedings of the 4th International Conference on Silicon Photovoltaics, SiliconPV (2014). pdf

Andreas Fell, Daniel Walter, Xinbo Yang, Sachin Surve, Evan Franklin, Klaus Weber and Daniel Macdonald,“Quantitative surface recombination imaging of single side processed silicon wafers obtained by photoluminescence modeling”, Proceedings of the 4th International Conference on Silicon Photovoltaics, SiliconPV (2014). pdf

F. E. Rougieux, N. E. Grant, D. Macdonald, J. Murphy,“Nature of some recombination active defect in CZ and FZ n-type silicon for high efficiency solar cells”, European Materials Research Society Spring Meeting, Lille, France, 2014.

N. E. Grant, F. E. Rougieux, D. Macdonald, J. Bullock, Y. Wan,“Recombination active defects limiting the lifetimeof float-zone silicon”, 24th Workshop on Crystalline Silicon Solar Cells and Modules Materials and Processes, Breckenridge, Colorado, 2014.

D.Macdonald, P. Zheng, F. E. Rougieux, “Limiting defects in high-lifetime n-type silicon wafers”, 24th Workshop on Crystalline Silicon Solar Cells and Modules Materials and Processes, Breckenridge, Colorado, 2014.

H. T. Nguyen, F. E. Rougieux, C. Baker-Finch, D. Macdonald, “Temperature Dependence of Band-Band Absorption and Radiative Re-combination in Crystalline Silicon from Spectral Photoluminescence”, Proceedings of the 40th IEEE Photovoltaic Specialists Conference, Denver, Colorado, 2014.

P. Zheng, F. E. Rougieux, D. Macdonald, A. Cuevas, A., “Parameterization of Carrier Mobility Sum in Silicon as a Function of Doping, Temperature and Injection Level: Extension to p-type Silicon”, Proceedings of the 40th IEEE Photovoltaic Specialists Conference, Denver, Colorado, 2014. pdf

H. C. Sio, T. Trupke and D. Macdonald, “Quantifying the recombination strength of grain boundaries in multicrystalline silicon wafers through photoluminescence imaging”, Proceedings of the 6th World Conference on Photovoltaic Energy Conversion (WCPEC-6), Kyoto, Japan (2014).

F. E. Rougieux, C. Samundsett, P. Zheng, K. Fong, D. Macdonald, M. Forster and R. Einhaus, “Towards high efficiency UMG silicon solar cells”, Proceedings of the 6th World Conference on Photovoltaic Energy Conversion (WCPEC-6), Kyoto, Japan (2014).

Nicholas E. Grant, Fiacre E. Rougieux, Daniel Macdonald, James Bullock and Yimao Wan, “Recombination active defects limiting the lifetime of float-zone silicon”, 24th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, Breckenridge, Colorado, July (2014), pp. 96-100.

Yimao Wan, Chris Samundsett, Teng Kho, Josephine McKeon, Lachlan Black, Daniel Macdonald, Andres Cuevas, Jian Sheng, Yun Sheng, Shengzhao Yuan, Chun Zhang, Zhiqiang Feng and Pierre J. Verlinden, “Towards industrial advanced front-junction n-type silicon solar cells”, Proceedings of the 40th IEEE Photovoltaic Specialists Conference, Denver, Colorado (2014). pdf

Hieu T. Nguyen, Fiacre E. Rougieux, Simeon C. Baker-Finch, and Daniel Macdonald, “Temperature Dependence of Optical Absorption and Radiative Recombination in Crystalline Silicon from Spectrally Resolved Photoluminescence”, Proceedings of the 40th IEEE Photovoltaic Specialists Conference, Denver, Colorado (2014). 



2013

Sieu Pheng Phang, Hang Sio and Daniel Macdonald, “Carrier De-smearing of Photoluminescence Images on Silicon wafers using the Continuity Equation”, Applied Physics Letters 103, 192112 (2013). pdf

S. Y. Lim, F. E. Rougieux and D. Macdonald, “Boron-oxygen defect imaging in p-type Czochralski silicon wafers”, Applied Physics Letters 103, 092105 (2013). pdf

Xinbo Yang, D. Macdonald, A. Fell, A. Shalav, Lujia Xu, D. Walter, T. Ratcliff, E. Franklin, K. Weber and R. G. Elliman,“Imaging of the relative saturation current density and sheet resistance of laser doped regions on silicon via photoluminescence”, Journal of Applied Physics 114, 053107 (2013). pdf

F. E. Rougieux, N. E. Grant and D. Macdonald, “Thermal deactivation of lifetime limiting grown-in point defects in n-type Czochralski silicon wafers”, Physica Status Solidi Rapid Research Letters 7 (9), pp. 616–618 (2013). pdf

Chog Barugkin, Yimao Wan, Daniel Macdonald and Kylie R. Catchpole “Evaluating plasmonic light trapping with photoluminescence”, IEEE Journal of Photovoltaics 3 (4), pp. 1292-1297 (2013). pdf

S. Y. Lim, X. Zhang, M. Forster, J. Holtkamp, M. Schubert, A. Cuevas and D. Macdonald, “Applications of photoluminescence imaging to dopant and carrier concentration measurements of silicon wafers”, IEEE Journal of Photovoltaics 3 (2), pp. 649-655 (2013). pdf

S. Y. Lim, M. Forster, D. Macdonald, “Estimation of solidification interface shapes in a boron-phosphorus compensated multicrystalline silicon ingot via photoluminescence imaging”, Journal of Crystal Growth 364, 67-73 (2013). pdf

Sieu Pheng Phang, Wensheng Liang, Bettina Wolpensinger, Michael Andreas Kessler and Daniel Macdonald, “Trade-offs between impurity gettering, bulk degradation, and surface passivation of boron rich layers on silicon solar cells”, IEEE Journal of Photovoltaics 3 (1), pp. 261-266 (2013). pdf

Conference papers

Stuart Hargreaves, Andres Cuevas and Daniel Macdonald, “Passivation of silicon wafers by sputter-deposited a-Si:H films”, Proceedings of the 28th European Photovoltaic Solar Energy Conference (PVSEC), Paris, France (2013).

Anyao Liu and Daniel Macdonald, “Precipitation of interstitial iron in multicrystalline silicon”, Proceedings of the 28th European Photovoltaic Solar Energy Conference (PVSEC), Paris, France (2013).

Xinbo Yang, Andreas Fell, Lujia Xu, Evan Franklin, Sachin Surve, Daniel Macdonald, Klaus Weber, Hideki Nishimura, Takashi Fuyuki, “Laser chemical processing (LCP) doping formed through different dielectric layers”, Proceedings of the 28th European Photovoltaic Solar Energy Conference (PVSEC), Paris, France (2013).

Daniel Macdonald, Sieu Pheng Phang and AnYao Liu, “External and internal gettering of interstitial iron in silicon solar cells”, 15th Gettering and Defect Engineering in Semiconductor Technology Conference (GADEST), Oxford, UK (2013). Invited presentation.

A. Y. Liu and D. Macdonald, “Precipitation behaviour of interstitial iron in multicrystalline silicon at 500-700°C”, 15th Gettering and Defect Engineering in Semiconductor Technology Conference (GADEST), Oxford, UK (2013).

S.Y. Lim, F.E. Rougieux, D. Macdonald “Boron-oxygen defect imaging in p-type Czochralski silicon”, 23rd Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, Breckenridge, Colorado, July (2013).

H. C. Sio, A. Abraham, T. Trupke and D. Macdonald, “The influence of crystal orientation on surface passivation in multicrystalline silicon”, Proceedings of the 39th IEEE Photovoltaic Specialists Conference, Tampa, Florida (2013).

F. E. Rougieux, N. E. Grant and D. Macdonald, “Multi-millisecond n-type Si wafers for high efficiency silicon solar cells: spatial homogeneity and defect engineering”, 3rd nPV Workshop, Chambery, France (2013). Oral presentation. 



2012

Journal papers

Sisi Wang and Daniel Macdonald, “Temperature dependence of Auger recombination in highly injected crystalline silicon”, Journal of Applied Physics 112, 113708 (2012). pdf

D. Macdonald, S. P. Phang, F. E. Rougieux, S. Y. Lim, D. Paterson, D. L. Howard, M. D. de Jonge and C. G. Ryan, “Iron-rich particles in heavily contaminated multicrystalline silicon wafers and their response to phosphorus gettering”, Semiconductor Science and Technology 27, 125016 (2012). pdf

H. C. Sio, Z. Xiong, T. Trupke and D. Macdonald, “Imaging grain orientations in multicrystalline silicon wafers via photoluminescence”, Applied Physics Letters 101, 082102 (2012). pdf

Bernhard Mitchell, Jürgen W. Weber, Daniel Walter, Daniel Macdonald, and Thorsten Trupke, “On the method of photoluminescence spectral intensity ratio imaging of silicon bricks: Advances and limitations”, Journal of Applied Physics 112, 063116 (2012). pdf

A. Y. Liu, D. Walter, S. P. Phang and D. Macdonald, “Investigating internal gettering of iron at grain boundaries in multicrystalline silicon via photoluminescence imaging”, IEEE Journal of Photovoltaics, 2 (4), pp. 479-484 (2012). pdf

F. E. Rougieux, M. Thiboust, P. Zheng, J. Tan, N. E. Grant, D. H. Macdonald and A. Cuevas, “A contactless method for determining the carrier mobility sum in silicon wafers for solar cells”, IEEE Journal of Photovoltaics, 2 (1), pp. 41-46 (2012). pdf

Andrés Cuevas, Maxime Forster, Fiacre Rougieux and Daniel Macdonald, “Compensation engineering for silicon solar cells”, Energy Procedia 15, 67–77 (2012). pdf

Sandra Herlufsen, Daniel Macdonald, Karsten Bothe, and Jan Schmidt, “Imaging of the interstitial iron concentration in crystalline silicon by measuring the dissociation rate of iron-boron pairs”, Physica Status Solidi Rapid Research Letters, 6 (1), pp. 1-3 (2012). pdf

Conference papers

Daniel Macdonald, “The emergence of n-type silicon for solar cell manufacture”, Proceedings of the 50th Annual AuSES Conference (Solar 2012), Melbourne, Australia (2012). Oral presentation.

Daniel Macdonald, Sieu Pheng Phang and AnYao Liu, “Detection and reduction of iron impurities in silicon solar cells”, Proceedings of the Japan Society for the Promotion of Science (JSPS) 6th International Symposium on Advanced Science and Technology of Silicon Materials, Kona, Hawaii, (2012), pp. 223-226. Invited presentation

H. C. Sio, S. P Phang, T. Trupke and D. Macdonald, “Electrical properties of different types of grain boundaries in multicrystalline silicon by photoluminescence imaging”, Proceedings of the 27th European Photovoltaic Solar Energy Conference, Frankfurt, Germany (2012), pp. 714-718. Oral presentation.

S. Y. Lim, M. Forster, X. Zhang, J. Holtkamp, M.C. Schubert, A. Cuevas and D. Macdonald, “Photoluminescence imaging for net doping measurements of surface limited silicon wafers”, Proceedings of the 22nd Photovoltaic Science and Engineering Conference (PVSEC-22), Hangzhou, China (2012), paper number 1-O-2. Oral presentation.

F. E. Rougieux, S. P. Phang, A. Shalav, B. Lim, J. Schmidt, D. Macdonald and A. Cuevas, “Acceptor-related metastable defects in compensated n-type silicon”, Proceedings of the 22nd Photovoltaic Science and Engineering Conference (PVSEC-22), Hangzhou, China (2012), paper number 1-O-3. Oral presentation.

F. E. Rougieux, M. Forster, D. Macdonald, and A. Cuevas, “Impact of minority-impurity scattering on the carrier mobility in compensated silicon”, Proceedings of the 22nd Photovoltaic Science and Engineering Conference (PVSEC-22), Hangzhou, China (2012), paper number 1-P-39.

Sieu-Pheng Phang and Daniel Macdonald, “Gettering of n-type multicrystalline silicon solar cells by phosphorus diffusion, boron diffusion and aluminum annealing”, Proceedings of the 22nd Photovoltaic Science and Engineering Conference (PVSEC-22), Hangzhou, China (2012), paper number 1-P-19.

A. Y. Liu, D. Walter and D. Macdonald, “Studying precipitation and dissolution of iron in multicrystalline silicon wafers during annealing”, Proceedings of the 22nd Photovoltaic Science and Engineering Conference (PVSEC-22), Hangzhou, China (2012), paper number 1-P-42.

S. Y. Lim, M. Forster, D. Macdonald, “Estimation of solidification interface shapes in a boron-phosphorus compensated multicrystalline silicon ingot via photoluminescence imaging”, 22nd Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, Vail, Colorado, July (2012), pp. 181-185.

S. Herlufsen, D. Macdonald, K. Bothe and J. Schmidt, “Imaging of the interstitial iron concentration in B-doped c-Si based on time-dependent photoluminescence imaging”, Proceedings of the 27th European Photovoltaic Solar Energy Conference, Frankfurt, Germany (2012), pp. 990-993.

AnYao Liu, Daniel Walter, Sieu Pheng Phang and Daniel Macdonald, “Modelling internal gettering of iron at grain boundaries in multicrystalline silicon measured via photoluminescence imaging” Proceedings of the 38th IEEE Photovoltaic Specialists Conference, Austin, Texas (2012), pp. 000248 - 000253.

Daniel Walter, Anyao Liu, Evan Franklin, Daniel Macdonald, Bernhard Mitchell and Thorsten Trupke, “Contrast Enhancement of Luminescence Images via Point-Spread Deconvolution,” Proceedings of the 38th IEEE Photovoltaic Specialists Conference, Austin, Texas (2012), pp. 000307 - 000312. 



2011

Journal papers

S. Y. Lim, S. P. Phang, A. Cuevas, T. Trupke and D. Macdonald, “Dopant concentration imaging in crystalline silicon wafers by band-to-band photoluminescence”, Journal of Applied Physics 110, 113712 (2011). pdf

F. E. Rougieux, D. Macdonald, A. Cuevas, B. Lim, J. Schmidt, “Recombination activity and impact of the boron-oxygen defect in compensated n-type silicon”, IEEE Journal of Photovoltaics 1 (1), pp. 54-58 (2011). pdf

F. E. Rougieux, B. Lim, J. Schmidt, M. Forster, D. Macdonald and A. Cuevas, “Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon”, Journal of Applied Physics 110, 063708 (2011). pdf

Michio Tajima, Takaaki Iwai, Hiroyuki Toyota, Simona Binetti and Daniel Macdonald, “Donor-Acceptor Pair Luminescence in Compensated Si for Solar Cells”, Journal of Applied Physics 110, 043506 (2011). pdf

S. Y. Lim and D. Macdonald, “Measuring dopant concentrations in p-type silicon using iron-acceptor pairing monitored by band-to-band photoluminescence”, Solar Energy Materials and Solar Cells 95 (8), pp. 2485-2489 (2011). pdf

S. P. Phang and D. Macdonald, “Direct comparison of boron, phosphorus and aluminum gettering of iron in crystalline silicon”, Journal of Applied Physics 109, 073521 (2011). pdf

AnYao Liu, Yang-Chieh Fan and Daniel Macdonald, “Interstitial iron concentrations across multicrystalline silicon wafers via photoluminescence imaging”, Progress in Photovoltaics: Research and Applications, 19 (6), pp. 649-657, (2011). pdf

V. V. Voronkov, R. Falster, A. V. Batunina, D. Macdonald, K. Bothe and J. Schmidt, “Lifetime degradation mechanism in boron-doped Czochralski silicon”, Energy Procedia 3, pp. 46-50 (2011). pdf

F. E. Rougieux, D. Macdonald and A. Cuevas, “Transport properties of p-type compensated silicon at room temperature”, Progress in Photovoltaics: Research and Applications, 19 (7), pp. 787-793, (2011).pdf

Daniel Macdonald and Andres Cuevas, “Recombination in compensated crystalline silicon for solar cells”, Journal of Applied Physics 109, 043704 (2011). pdf

J. Tan, D. Macdonald, F. Rougieux and A. Cuevas, “Accurate measurement of the formation rate of iron-boron pairs in silicon”, Semiconductor Science and Technology, 26, 055019 (2011). pdf

G. Coletti, P. Bronsveld, G. Hahn, W. Warta, D. Macdonald, B. Ceccaroli, K. Wamback, N. Le Quang and J.M. Fernandez, “Impact of metal contamination in silicon solar cells”, Advanced Functional Materials, 21 (5), pp. 879-890 (2011). pdf

D. Macdonald, A. Liu, F. Rougieux, A. Cuevas, B. Lim and J. Schmidt, “The impact of dopant compensation on the boron-oxygen defect in p- and n-type crystalline silicon”, Physica Status Solidi A, 208 (3), pp. 559-563 (2011). pdf

Conference papers

Peinan Teng, Bernhard Mitchell, Siew Lim, Daniel Macdonald and Thorsten Trupke, “Acceptor dopant measurement on silicon bricks via iron-boron pair formation rate based on photoluminescence imaging”, Proceedings of the 49th Annual AuSES Conference (Solar 2011), Sydney, Australia (2011).

S. Y. Lim and D. Macdonald, “Dopant concentration imaging in p-type silicon by photoluminescence measurements of iron-acceptor kinetics”, Proceedings of the 26th European Photovoltaic Solar Energy Conference, Hamburg, Germany (2011), pp. 1017-1020. Oral presentation.

D. Macdonald, S. P. Phang and A. Y. Liu, “Properties of iron in silicon solar cells: recombination activity, gettering, and detection methods”, 26th International Conference on Defects in Semiconductors (ICDS-26), Nelson, New Zealand (2011). Invited presentation.

Andrés Cuevas, Maxime Forster, Fiacre Rougieux and Daniel Macdonald, “Compensation engineering for silicon solar cells”, International Conference on Materials for Advanced Technologies (ICMAT), Singapore (2011). Invited presentation.

F. E. Rougieux, D. Macdonald, A. Cuevas, B. Lim, J. Schmidt, “Recombination activity and impact of the boron-oxygen defect in compensated n-type silicon”, Proceedings of the 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington (2011).

F. E. Rougieux, M. Thiboust, P. Zheng, J. Tan, N. E. Grant, D. Macdonald and A. Cuevas, “A contactless method for determining the carrier mobility sum in silicon wafers for solar cells”, Proceedings of the 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington (2011). 



2010

Journal papers

Bianca Lim, Fiacre Rougieux, Daniel Macdonald, Karsten Bothe, and Jan Schmidt, “Generation and annihilation of boron-oxygen-related recombination centers in compensated p- and n-type silicon”, Journal of Applied Physics 108, 103722 (2010). pdf

Daniel Macdonald and An Liu, “Recombination activity of iron-boron pairs in compensated p-type silicon”, Physica Status Solidi B 247 (9), pp. 2218-2221 (2010). pdf

Daniel Macdonald, Fiacre Rougieux, Yves Mansoulie, Jason Tan, David Paterson, Daryl L. Howard, Martin D. de Jonge and Chris G. Ryan, “Scanning x-ray fluorescence microspectroscopy of metallic impurities in solar-grade silicon”, Physica Status Solidi A 207 (8), pp. 1807-1810 (2010). pdf

F. E. Rougieux, D. Macdonald, A. Cuevas, S. Ruffell, J. Schmidt, B. Lim, A. Knights, “Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon”, Journal of Applied Physics 108, 013706 (2010). pdf

M. Tajima, T. Iwai, H. Toyota, S. Binetti and D. Macdonald, “Fine structure due to donor-acceptor pair luminescence in compensated Si”, Applied Physics Express 3, 071301 (2010). pdf

F. Rougieux, D. Macdonald, K. R. McIntosh and A. Cuevas, “Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon”, Semiconductor Science and Technology 25, 055009 (2010). pdf

B. B. Paudyal, K. R. McIntosh, D. H. Macdonald and G. Coletti , “Temperature dependent carrier lifetime studies of Mo in silicon”, Journal of Applied Physics 107, 054511 (2010). pdf

Conference papers

D. Macdonald, F. Rougieux, Y. Mansoulie, J. Tan, D. Patterson, D. Howard, M. De Jonge and C. Ryan, “Synchrotron studies of solar-grade silicon feedstock and wafers”, Proceedings of the 48th Annual AuSES Conference (Solar 2010), Canberra (2010).

V. V. Voronkov, R. Falster, A. V. Batunina, D. Macdonald, K. Bothe and J. Schmidt, “Lifetime degradation mechanism in boron-doped Czochralski silicon”, E-MRS Fall Meeting, Warsaw, Poland (2010).

Bianca Lim, An Liu, Daniel Macdonald, Karsten Bothe, and Jan Schmidt, “Permanent deactivation of the boron-oxygen related recombination center in compensated silicon”, Proceedings of the 25th European Photovoltaic Solar Energy Conference, Valencia, Spain (2010), pp. 1205-1209.

Jason Tan, Andres Cuevas and Daniel Macdonald, “A revised equation for the formation rate of iron-boron pairs in silicon”, Proceedings of the 25th European Photovoltaic Solar Energy Conference, Valencia, Spain (2010), pp. 437-440.

F. Rougieux, D. Macdonald, A. Cuevas, S. Ruffell, J. Schmidt, B. Lim and A. Knights, “Electron and hole mobility reduction and Hall Factor in compensated p-type silicon”, Proceedings of the 25th European Photovoltaic Solar Energy Conference, Valencia, Spain (2010), pp. 1244-1249.

Michio Tajima, Takaaki Iwai, Hiroyuki Toyota, Simona Binetti, and Daniel Macdonald, “Pair Luminescence between P Donors and B Acceptors in Compensated Si”, 20th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, Breckenridge, Colorado, August (2010).

M. Tajima , T. Iwai , H. Toyota , S. Binetti and D. Macdonald, “Fine Structure Due to Donor-Acceptor Pair Luminescence in Si”, Proceedings of the 71st Autumn Meeting of the Japanese Society of Applied Physics, (2010).

S. P. Phang and D. Macdonald, “Boron, phosphorus and aluminium gettering of iron in crystalline silicon: Experiments and modelling”, Proceedings of the 35th IEEE Photovoltaic Specialists Conference, Waikiki, Hawaii (2010), pp. 352-256. Oral presentation.

Yang-Chieh Fan, Jason Tan, Sieu Pheng Phang and Daniel Macdonald , “Iron imaging in multicrystalline silicon wafers via photoluminescence”, Proceedings of the 35th IEEE Photovoltaic Specialists Conference, Waikiki, Hawaii (2010), pp. 439-442. Oral presentation.

D. Macdonald, A. Liu, F. Rougieux, A. Cuevas, B. Lim and J. Schmidt, “The impact of dopant compensation on the boron-oxygen defect in crystalline silicon”, E-MRS Spring Meeting, Strasbourg, France (2010). Invited presentation.

S. Binetti, A. Le Donne, M. Acciarri, D. Macdonald, T. Iwai and M. Tajima, “Spectroscopic and electrical characterization of compensated silicon”, E-MRS Spring Meeting, Strasbourg, France (2010). 



2009

Journal papers

Bianca Lim, An Liu, Daniel Macdonald, Karsten Bothe and Jan Schmidt, “Impact of compensation on the deactivation of boron-oxygen recombination-centers in crystalline silicon”, Applied Physics Letters 95, 232109 (2009). pdf

Jonathon Mitchell, Daniel Macdonald and Andres Cuevas, “Thermal activation energy for the passivation of the n-type crystalline silicon surface by hydrogenated amorphous silicon”, Applied Physics Letters 94, 162102 (2009). pdf

D. Macdonald, F. Rougieux, A. Cuevas, B. Lim, J. Schmidt, M. Di Sabatino and L. J. Geerligs, “Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon”, Journal of Applied Physics 105, 093704 (2009). pdf

B. B. Paudyal, K. R. McIntosh and D. H. Macdonald, “Temperature dependent carrier lifetime studies on Ti-doped multicrystalline silicon”, Journal of Applied Physics 105, 124510 (2009). pdf

Conference papers

D. Macdonald, A. Liu, F. Rougieux, A. Cuevas, B. Lim, J. Schmidt, M. Di Sabatino and L. J. Geerligs, “Boron-oxygen defects in compensated p-type Czochralski silicon”, Proceedings of the 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany (2009), pp. 877-882. Plenary presentation.

D. Macdonald, A. Cuevas, “Carrier recombination and transport in compensated silicon, and prospects for ‘compensation engineering’”, 19th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, Vail, Colorado, August (2009). Invited presentation.

F. Rougieux, D. Macdonald, K. R. McIntosh and A. Cuevas, “Oxidation-induced inversion layer in compensated p-type silicon”, Proceedings of the 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany (2009), pp. 1086-1089. Oral presentation.

Bijaya B. Paudyal, Keith R. McIntosh, Daniel H. Macdonald and Gianluca Coletti, “Temperature dependent electron and hole capture cross sections of molybdenum in silicon”, Proceedings of the 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany (2009), pp. 981-984. Oral presentation.

B. B. Paudyal, K. R. McIntosh and D. H. Macdonald, “Temperature dependent electron and hole capture cross sections of iron-contaminated boron-doped silicon”, Proceedings of the 34th IEEE Photovoltaic Specialists Conference, Philadelphia, PA (2009), pp. 1588 - 1593.

J. Tan, A. Pascoe, D. Macdonald and A. Cuevas, “A novel method to detemine the majority carrier mobility in p-type multi-crystalline silicon”, Proceedings of the 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany (2009), pp. 489-491. 



2008

Journal papers

D. Macdonald, K. McLean, P. N. K. Deenapanray, S. De Wolf and J. Schmidt, "Electronically-coupled up-conversion: An alternative approach to impurity photovoltaics in crystalline silicon", Semiconductor Science and Technology, 23, 015001 (2008). pdf

J. Tan, A. Cuevas, D. Macdonald, T. Trupke, R. Bardos and K. Roth, "On the electronic improvement of multi-crystalline silicon via gettering and hydrogenation", Progress in Photovoltaics: Research and Applications, 16 (2), 129-134 (2008). pdf

D. Macdonald, J. Tan and T. Trupke, "Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence", Journal of Applied Physics 103, 073710 (2008). pdf

D. Macdonald, A. Cuevas and L. J Geerligs, “Measuring dopant concentrations in compensated p-type crystalline silicon via iron-acceptor pairing”, Applied Physics Letters 92, 202119 (2008). pdf

B.B. Paudyal, K.R. McIntosh, D.H. Macdonald, B.S. Richards and R.A. Sinton, “The implementation of temperature control to an inductive-coil photoconductance instrument for the range of 0 to 230°C”, Progress in Photovoltaics: Research and Applications, 16, 609-613 (2008). pdf

Keith R. McIntosh, Bijaya B. Paudyal and Daniel H. Macdonald, "Generalized procedure to determine the dependence of steady-state photoconductance lifetime measurements on the occupation of multiple defects", Journal of Applied Physics 104, 084503 (2008).pdf

Tsu-Tsung Andrew Li, Keith R. McIntosh and Andres Cuevas, "Limitations of a simplified dangling bond recombination model for a-Si:H", Journal of Applied Physics 104, 113718 (2008). pdf

Conference papers

D. Macdonald, A. Cuevas and L. J Geerligs, “Carrier lifetime studies of strongly compensated p-type Czochralski silicon”, Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain (2008), pp. 951-957. Plenary presentation.

D. Macdonald, “Impurities in solar-grade silicon: Specifying tolerance levels in feedstock”, 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD '08), IUMRS-ICEM08, Sydney, Australia (2008). Invited presentation.

B. B. Paudyal, K. R. McIntosh and D. H. Macdonald, "Electron capture cross section of iron-boron pairs in crystalline silicon over the temperature range 0 - 100 °C", 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, (2008), pp.1481-1483.

D. Macdonald, K. E. P. Sepulveda, J. Tan and A. Cuevas, "Gettering and hydrogenation in n-type multicrystalline silicon"", 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, September 1-5, 2008 (105 kB).

A. F. Thomson,, K. R. McIntosh and D. H. Macdonald, "Effective lifetime characterisation of a room temperature meta-stable defect in n-type 5 ohm.cm FZ phosphorus-diffused oxide-passivated silicon"", 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain (2008) pp.517-521 (292 kB).

D. Macdonald, E. Sepulveda, J. Tan and A. Cuevas, “Gettering and hydrogenation in n-type multicrystalline silicon”, Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain (2008), pp. 1475-1477. 



2007

Journal papers

D. Macdonald, P. Rosenits and P. N. K. Deenapanray, "Recombination activity of manganese in p- and n-type crystalline silicon", Semiconductor Science and Technology, 22, pp. 163-167 (2007). pdf

J. Tan, D. Macdonald, N. Bennet, D. Kong, A. Cuevas and I. Romijn, “Dissolution of metal precipitates in multi-crystalline silicon during annealing and the protective effect of phosphorus emitters”, Applied Physics Letters 91, 043505 (2007). pdf

T. Roth, P. Rosenits, S. Diez, S. W. Glunz, D. Macdonald, S. Beljakowa and G. Pensl, “Electronic properties and dopant pairing behavior of manganese in boron-doped silicon”, Journal of Applied Physics 102, 103716 (2007). pdf

Conference papers

L.J. Geerligs, D. Macdonald and G. Colletti, “Possible reduction of recombination lifetime due to compensated dopants”, 17th NREL Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, Vail, Colorado (2007) (199 kB).

J. Mitchell, D. Macdonald and A. Cuevas, “Plasma-Enhanced Chemical Vapour Deposition of a-Si:H to Provide Surface Passivation of c-Si Surfaces at Low Temperature”, Proceedings of the 22nd European Photovoltaic Solar Energy Conference, Milan, Italy (2007), pp. 928-931. Oral presentation.

J. Tan, A. Cuevas, D. Macdonald, N. Bennett, I. Romijn, T. Trupke, R. Bardos “Optimised gettering and hydrogenation of multi-crystalline silicon wafers for use in solar cells”, Proceedings of the 22nd European Photovoltaic Solar Energy Conference, Milan, Italy (2007), pp. 1309-1313.

D. Macdonald and J. Tan, “Impurities in solar-grade silicon”, Proceedings of the SPIE Conference on Microelectronics, MEMS, and Nanotechnology, Canberra, Australia (2007). Invited presentation.

D. Macdonald, J. Tan, R. Bardos and T. Trupke, "Impurities in solar-grade silicon materials and their characterisation", pp. 820-828, 22nd European Photovoltaic Solar Energy Conference, Milan, Italy, 3-7 September, 2007 (445 kB).

T. Trupke, R.A. Bardos, M.D. Abbott, P. Würfel, E. Pink, Y. Augarten, F.W. Chen, K. Fisher, J.E. Cotter, M. Kasemann, M. Rüdiger, S. Kontermann, M.C. Schubert, M. The, S.W. Glunz, W. Warta, D. Macdonald, J. Tan, A. Cuevas, J. Bauer, R. Gupta, O. Breitenstein, T. Buonassisi, G. Tarnowski, A. Lorenz, H.P. Hartmann, D.H. Neuhaus, J.M. Fernandez, “Progress with luminescence imaging for the characterisation of silicon wafers and solar cells”, Proceedings of the 22nd European Photovoltaic Solar Energy Conference, Milan, Italy (2007), pp. 21-31. Invited presentation.

P. Rosenits, T. Roth, S. Diez, D. Macdonald and S. W. Glunz, “Detailed studies of manganese in silicon using lifetime spectroscopy and deep-level transient spectroscopy”, Proceedings of the 22nd European Photovoltaic Solar Energy Conference, Milan, Italy (2007), pp. 1480-1483.

A.R. Burgers, L.J. Geerligs, D.H. Macdonald and A. Azzizi, “Quantitative analysis of grain boundary recombination in multi-crystalline silicon wafers”, Proceedings of the 17th International Photovoltaic Science and Engineering Conference, Fukuoka, Japan (2007), pp. 241-242. Oral presentation. 



2006

Journal papers

D. Macdonald, H. Mäckel and A. Cuevas, "The effect of gettered iron on recombination in diffused regions of crystalline silicon wafers", Applied Physics Letters, 88, 092105 (2006). pdf

J. Schmidt, K. Bothe, D. Macdonald, J. Adey, R. Jones and D. W. Palmer, "Electronically stimulated degradation of silicon solar cells", Journal of Materials Research, 21 (1), pp. 5-12 (2006). pdf

M.Petravic, Q.Gao, D.Llewellyn, P.N.K.Deenapanray, D.Macdonald and C.Crotti, “Broadening of vibrational levels in x-ray absorption spectroscopy of molecular nitrogen in compound semiconductors”, Chemical Physics Letters 425 (4-6), pp. 262-266 (2006).pdf

C. Gatzert, A. W. Blakers, P. N. K. Deenapanray, D. Macdonald and F. D. Auret, "Investigation of reactive ion etching of dielectrics and Si in CHF3/O2 or CHF3/Ar for photovoltaic applications", Journal of Vacuum Science and Technology A, 24 (5), pp. 1857-1865 (2006). pdf

Prakash N. K. Deenapanray, C. S. Athukorala, Daniel Macdonald, W. E. Jellett, E. Franklin, V. E. Everett, K. J. Weber and A. W. Blakers, "Reactive Ion Etching of Dielectrics and Silicon for Photovoltaic Applications", Progress in Photovoltaics: Research and Applications, 14 (7), pp. 603-614 (2006). pdf

D. Macdonald, T. Roth, P. N. K. Deenapanray, T. Trupke and R. A. Bardos, “Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon”, Applied Physics Letters, 89, 142107 (2006). pdf

Conference papers

Kate McLean, Chris Morrow and Daniel Macdonald, "Activation energy for the hydrogenation of iron in p-type crystalline silicon wafers", pp. 1122-1125, 4th World Conference on Photovoltaic Energy Conversion, Waikoloa, Hawaii, 8-12 May, 2006

J. Tan, A. Cuevas, D. Macdonald, K. Roth, D.H. Neuhaus and M.Ghosh, “Investigation of industrial processing and its impacts on multicrystalline silicon substrate quality”, pp. 881-884. 21st European Photovoltaic Solar Energy Conference, Dresden, Germany, 4-8 September, 2006

J. Tan, A. Cuevas, D. Macdonald, D. Bätzner, H. Mäckel, K. Hanton, “Measurement and optimization of the recombination current of p+ aluminium doped regions”, pp. 1377-1380, 21st European Photovoltaic Solar Energy Conference, Dresden, Germany, 4-8 September, 2006

L.J. Geerligs, G. Coletti and Daniel Macdonald, “On accurate and quantitative measurements of iron-concentration in multicrystalline silicon by iron-boron pair dissociation”, pp. 692-695, 21st European Photovoltaic Solar Energy Conference, Dresden, Germany, 4-8 September, 2006.

T. Weber, C. Zechner, D. Macdonald and P. P. Altermatt, “Numerical simulation of gettering and recombination in iron-contaminated boron emitters”, pp. 1486-1489, 21st European Photovoltaic Solar Energy Conference, Dresden, Germany, 4-8 September, 2006

P. Rosenits and D. Macdonald, “Lifetime studies on manganese implanted silicon”, pp. 953-956, 21st European Photovoltaic Solar Energy Conference, Dresden, Germany, 4-8 September, 2006

D. Macdonald and P. Rosenits, “The impact of manganese contamination on the carrier lifetime in crystalline silicon”, 44th Australian and New Zealand Solar Energy Society Conference, Canberra, Australia, 13-15 September, 2006.

J. Tan, A. Cuevas, D. Baetzner, H. Mäckel, D Macdonald, K. Hanton, “Examination of Screen Printed Aluminium Back Surface Fields for Silicon Solar Cells”, 44th Australian and New Zealand Solar Energy Society Conference, Canberra, Australia, 13-15 September, 2006 



2005

Journal papers

D. Macdonald, A. Cuevas, A. Kinomura, Y. Nakano and L. J. Geerligs, “Transition metal profiles in a multicrystalline silicon ingot”, Journal of Applied Physics 97 (3), 033523 (2005). pdf

D. Macdonald, T. Roth, P. N. K. Deenapanray, K. Bothe, P. Pohl and J. Schmidt, “Formation rates of iron-acceptor pairs in crystalline silicon”, Journal of Applied Physics 98 (8), 083509 (2005). pdf

D. Macdonald, "Impact of nickel contamination on carrier recombination in n- and p-type crystalline silicon wafers", Applied Physics A: Materials Science and Processing 81 (8), 1619-1625 (2005). pdf

D. Macdonald, P. N. K. Deenapanray, A. Cuevas, S. Diez and S. W. Glunz, "The role of silicon interstitials in the formation of boron-oxygen defects in Czochralski silicon", Solid-State Phenomena 108-109, pp. 497-502 (2005). pdf

D. Macdonald, A. Cuevas, T. Roth and L. J. Geerligs, “Behaviour of natural and implanted iron during annealing of multicrystalline silicon wafers”, Solid-State Phenomena 108-109, pp. 519-524 (2005). pdf

Prakash N. K Deenapanray, M. Hörteis, Daniel Macdonald and K. J. Weber, “Minority Carrier Lifetime Properties of Reactive Ion Etched p-type Float Zone Si”, Electrochemical and Solid-State Letters 8 (3), pp. G78-G81 (2005). pdf

J. Schmidt and D. Macdonald, "Recombination activity of iron-gallium and iron-indium pairs in silicon", Journal of Applied Physics 97 (11), 113712 (2005). pdf

G. Kumaravelu, M. M. Alkaisi, D. Macdonald, J. Zhao, B. Rong and A. Bittar, “Minority carrier lifetime in plasma textured silicon wafers for solar cells”, Solar Energy Materials and Solar Cells 87 (1-4), pp. 99-106 (2005). pdf

J. E. Birkholz, K. Bothe, D. Macdonald and J. Schmidt, “Electronic properties of iron-boron pairs in boron-doped silicon by temperature- and injection-level dependent lifetime measurements”, Journal of Applied Physics 97 (10), 103708 (2005). pdf

Conference papers

D. L. Bätzner, J. Tan, K. Hanton, R. Ferre, D. Macdonald, A. Cuevas, S. Peters, D. H. Neuhaus, M. Ghosh, "Dependence of phosphorus gettering of multicrystalline silicon on diffusion sheet resistance and ingot position", pp. 655-658, 20th European Photovoltaic Solar Energy Conference, Barcelona, Spain (2005)

D. Macdonald, A. Cuevas, K. McIntosh, L. Barbosa and D. DeCeuster, "Influence of Cr, Fe, Ni, Ti and W surface contamination on diffused and oxidised n-type crystalline silicon wafers", pp. 627-630, 20th European Photovoltaic Solar Energy Conference, Barcelona, Spain (2005)

P.N.K. Deenapanray, C.S. Athukorala, D. Macdonald, V.E. Everett, K.J. Weber and A.W. Blakers, "Influence of reactive ion etching on the minority carrier lifetime in p-type silicon", pp. 643-646, 20th European Photovoltaic Solar Energy Conference, Barcelona, Spain (2005)

J. Schmidt, K. Bothe, D. Macdonald, J. Adey, R. Jones and D. W. Palmer, "Mechanisms of light-induced degradation in mono- and multicrystalline silicon solar cells", pp. 761-764, 20th European Photovoltaic Solar Energy Conference, Barcelona, Spain (2005)

J. E Birkholz, K. Bothe, J. Schmidt and D. Macdonald, "Recombination parameters of iron-boron pairs in boron-doped crystalline silicon", pp. 1340-1343, 20th European Photovoltaic Solar Energy Conference, Barcelona, Spain (2005).

A. Cuevas and D. Macdonald, "Multicrystalline silicon: a review of its electronic properties", pp. 521-524, 15th International Photovoltaic Science and Engineering Conference, Shanghai, China, October 10-15 (2005)

D. Macdonald and A. Cuevas, "Reduced recombination activity of nickel precipitates: another advantage of n-type silicon", pp. 210-211, 15th International Photovoltaic Science and Engineering Conference, Shanghai, China, October 10-15 (2005)

Nils-Peter Harder and Daniel Macdonald, “Electronic up-conversion: a combination of the advantages of impurity photovoltaics and (optical) up-conversion”, pp. 110-113, 31st IEEE Photovoltaic Specialists Conference, Orlando, FL, January (2005)

J. Schmidt, K. Bothe, D. Macdonald, J. Adey, R. Jones and D. W. Palmer, “Electronically Stimulated Degradation of Crystalline Silicon Solar Cells”, Materials Research Society Spring Meeting, San Francisco, CA (2005) 



2004

Journal papers

D. H. Macdonald, A. Cuevas, M. J. Kerr, C. Samundsett, D. Ruby, S. Winderbaum and A. Leo, “Texturing industrial multicrystalline silicon solar cells”, Solar Energy, 76, pp. 277-283 (2004). pdf

A. Cuevas and D. Macdonald, “Measuring and interpreting the lifetime of silicon wafers”, Solar Energy, 76, pp. 255-262 (2004). pdf

G. Kumaravelu, M. M. Alkaisi, A. Bittar, D. Macdonald and J. Zhao, “Damage studies in dry etched textured silicon surfaces”, Current Applied Physics, 4, pp. 108-110 (2004). pdf

D. H. Macdonald, L. J. Geerligs and A. Azzizi, “Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping”, Journal of Applied Physics, 95 (3), pp. 1021-1028 (2004). pdf

L. J. Geerligs and D. Macdonald, “Base doping and recombination activity of impurities in crystalline silicon solar cells”, Progress in Photovoltaics: Research and Applications, 12, pp. 309-316 (2004).

D. Macdonald, P. N. K. Deenapanray and S. Diez, “Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon”, Journal of Applied Physics, 96 (7), pp. 3687-3691 (2004). pdf

D. Macdonald and L. J. Geerligs, “Recombination activity of iron and other transition metal point defects in n- and p-type crystalline silicon”, Applied Physics Letters 85 (18), pp. 4061-4063 (2004). pdf

L. J. Geerligs and D. Macdonald, “Dynamics of light-induced dissociation of FeB pairs in crystalline silicon”, Applied Physics Letters 85 (22), pp. 5227-5229 (2004). pdf

Conference papers

D. Macdonald and L. J. Geerligs, “Recombination activity of iron and other transition metals in p- and n-type silicon” Proceedings of the 19th European Photovoltaic Solar Energy Conference, Paris pp. 492-495 (2004). Oral presentation.

D. Macdonald, K. McLean, J. Mitchell, P. N. K. Deenapanray and S. De Wolf “An alternative scheme for implementing the impurity-photovoltaic effect in crystalline silicon solar cells” Proceedings of the 19th European Photovoltaic Solar Energy Conference, Paris pp. 88-91 (2004). Oral presentation.

S. Winderbaum, A. Cuevas, F. Chen, J. Tan, K. Hanton, D. Macdonald and K. Roth, “Industrial PECVD silicon nitride: surface and bulk passivation of silicon wafers” Proceedings of the 19th European Photovoltaic Solar Energy Conference, Paris pp. 576-579 (2004). Oral presentation.

A. Azzizi, L. J. Geerligs and D. Macdonald, “Hydrogen passivation of iron in crystalline silicon” Proceedings of the 19th European Photovoltaic Solar Energy Conference, Paris pp. 1021-1024 (2004).

G. Kumaravelu, M. M. Alkaisi, D. Macdonald, J. Zhao and B. Rong, “ Minority carrier lifetime in plasma textured silicon wafers for solar cells”, International Conference on the Physics, Chemistry and Engineering of Solar Cells, Badajoz, Spain (2004).

D. Macdonald, A. Kinomura, L. J. Geerligs and A. Cuevas, “Interstitial and precipitated iron content of photovoltaic-grade cast multicrystalline silicon”, Proceedings of the 4th International Symposium on Advanced Science and Technology of Silicon Materials, Kona, Hawaii, pp. 390-395 (2004).

J. Schmidt, K. Bothe, D. Macdonald, J. Adey, R. Jones and D. W. Palmer, “Mechanisms of light-induced degradation in c-Si solar cells”, Proceedings of the 4th International Symposium on Advanced Science and Technology of Silicon Materials, Kona, Hawaii, pp. 461-466 (2004). Invited presentation.

J. Mitchell, D. Macdonald, A. Cuevas and P. Jennings, “Surface passivation of n- and p-type crystalline silicon wafers by amorphous silicon films”, Proceedings of the 42nd Annual Australian and New Zealand Solar Energy Society Conference, Perth, Australia, (2004). 



2003

Journal papers

D. Macdonald and A. Cuevas, “Validity of Shockley-Read-Hall statistics for modeling carrier lifetimes in silicon”, Physical Review B, 67 075203 (2003). pdf

D. H. Macdonald, H. Maeckel, S. Doshi, W. Brendle, A. Cuevas, J. S. Williams and M. J. Conway, “Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon”, Applied Physics Letters, 82 pp.2987-2989 (2003). pdf

Conference papers

G. Kumaravelu, M. M. Alkaisi, A. Bittar, D. Macdonald and J. Zhao, “Damage studies in dry etched textured silicon surfaces”, 1st International Conference on Advanced Materials and Nanotechnology (AMN-1), Wellington, New Zealand (2003).

D. Macdonald, A. Cheung and A. Cuevas, “Gettering and poisoning of silicon wafers by phosphorus diffused layers”, Proceedings of the 3rd World Conference on Photovoltaic Solar Energy Conversion, Osaka, Japan, pp. 1336-1339 (2003).

D. Macdonald, A. Cuevas, S. Rein, P. Lichtner, and S. W. Glunz. “Temperature- and injection-dependent lifetime spectroscopy of copper-related defects in silicon”, Proceedings of the 3rd World Conference on Photovoltaic Solar Energy Conversion, Osaka, Japan, pp. 87-90 (2003).

A. Cuevas, C. Samundsett, M. J. Kerr, D. H. Macdonald, H. Mäckel and P.P. Altermatt, “Back junction solar cells on n-type multicrystalline and CZ silicon wafers”, Proceedings of the 3rd World Conference on Photovoltaic Solar Energy Conversion, Osaka, Japan, pp. 963-966 (2003).

A. Cuevas, S. Riepe, M. J. Kerr, D. H. Macdonald, G. Coletti and F. Ferrazza, “N-type multicrystalline silicon: a stable, high lifetime material”, Proceedings of the 3rd World Conference on Photovoltaic Solar Energy Conversion, Osaka, Japan, pp. 1312-1315 (2003).

S. W. Glunz, A. Grohe, M. Hermle, E. Schneiderlöchner, J. Dicker, R. Preu, H. Mäckel, D. Macdonald, A. Cuevas, “Analysis of laser-fired local back surface fields using n+np+ cell structures”, Proceedings of the 3rd World Conference on Photovoltaic Solar Energy Conversion, Osaka, Japan, pp. 1332-1335 (2003).

D. Macdonald, L. J. Geerligs and S. Riepe, “Light-induced lifetime degradation in multicrystalline silicon”, Proceedings of the 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Vail, Colorado, edited by B. L. Sopori, pp. 182-185 (2003).

L. Geerligs, A. Azzizi, D. Macdonald and P. Manshanden,, “Hydrogen passivation of iron in multicrystalline silicon”, Proceedings of the 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Vail, Colorado, edited by B. L. Sopori, pp. 199-202 (2003). 



2002

Journal papers

A. Cuevas, R. A. Sinton, M. Kerr, D. Macdonald and H. Mackel, “A contactless photoconductance technique to evaluate the quantum efficiency of solar cell emitters” Solar Energy Materials and Solar Cells, 71 (3) pp.295-312 (2002). pdf

Conference papers

D. Macdonald, A. Cuevas, A. Kinomura and Y. Nakano, “Phosphorus Gettering in Multicrystalline Silicon Studied by Neutron Activation Analysis”, Proc. 29th IEEE Photovoltaic Specialists Conf., New Orleans, LA pp. 285-288 (2002).

D. Macdonald, W. Brendle, A. Cuevas and A. A. Istratov, “Injection-dependent lifetime studies of copper precipitates in silicon”, Proceedings of the 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Breckenridge, Colorado pp. 201-204 (2002). 



2001

Journal papers

D. Macdonald and A. Cuevas, “Understanding carrier trapping in multicrystalline silicon” Solar Energy Materials and Solar Cells, 65 (4) pp.509-516 (2001).pdf

D. Macdonald, A. Cuevas and J. Wong-Leung, “Capture cross-sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements” Journal of Applied Physics, 89 (12) pp.7932-7939 (2001).pdf

D. Macdonald, R. A. Sinton and A. Cuevas, “On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements in silicon” Journal of Applied Physics, 89 (5) pp.2772-2778 (2001).pdf

D. Macdonald and A. Cuevas, “Comment on "Mechanisms for the anomalous dependence of carrier lifetime on injection level and photoconductance on light intensity" [J. Appl. Phys. 89, 332 (2001)]” Journal of Applied Physics, 90 (5) pp.2621-2622 (2001).pdf

Conference papers

A. Cuevas and D. Macdonald, “Measuring and interpreting the lifetime of silicon wafers” International Solar Energy Society 2001 Solar World Congress, Adelaide, Australia, (2001).

D. Macdonald and A. Cuevas, “Metallic impurities in multicrystalline silicon” Proceedings of the International Solar Energy Society 2001 Solar World Congress, Adelaide, Australia, (2001).

D. Macdonald, M. Kerr, C. Samundsett, A. Cuevas, S. Winderbaum and A. Leo, “Texturing of industrial multicrystalline silicon solar cells” Proceedings of the International Solar Energy Society 2001 Solar World Congress, Adelaide, Australia, (2001).

K. Stewart, A. Cuevas, D. Macdonald and J. Williams, “Influence of copper on the carrier lifetime of n-type and p-type silicon” Proceedings of the 11th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Estes Park, Colorado, pp. 212-215 (2001).

D. Macdonald and A. Cuevas, “Lifetime spectroscopy of FeB pairs in silicon” Proceedings of the 11th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Estes Park, Colorado, pp. 24-31 (2001). Invited paper. 



2000

Journal papers

D. Macdonald and A. Cuevas, “Reduced fill factors in multicrystalline silicon solar cells due to injection-level dependent bulk recombination lifetimes” Progress in Photovoltaics: Research and Applications, 8 (4) pp.363-375 (2000).pdf

Conference papers

A. Cuevas, M. Kerr, D. Macdonald and R. Sinton, “Emitter quantum efficiency from contactless photoconductance measurements” Proceedings of the 28th IEEE Photovoltaic Specialists Conference, Anchorage, Alaska, pp. 108-111 (2000).

A. Cuevas, M. Kerr, D. Macdonald, C. Samundsett and A. Sloan, “Evidence of impurity gettering by industrial phosphorus diffusion” Proceedings of the 28th IEEE Photovoltaic Specialists Conference, Anchorage, Alaska, pp. 244-247 (2000).

M. Stocks and D. Macdonald, “Non-ideal resistive effects in silicon solar cells” Proceedings of the 16th European Photovoltaic Solar Energy Conference, Glasgow, U.K., pp.1671-1674 (2000).

D. Macdonald and A. Cuevas, “The trade-off between phosphorus gettering and thermal degradation in multicrystalline silicon” Proceedings of the 16th European Photovoltaic Solar Energy Conference, Glasgow, U.K., pp.1707-1710 (2000).

D. Macdonald, A. Cuevas, M. Kerr, C. Samundsett, A. Sloan, A. Leo, M. Mrcarica, S. Winderbaum and S. Shea, “Characterisation of a commercial silicon solar cell process” Proceedings of the 38th Annual Australian and New Zealand Solar Energy Society Conference, Brisbane, Australia, pp. 430-436 (2000).

D. Macdonald and A. Cuevas, “The use of injection-level dependent lifetime measurements for determining solar cell parameters” Proceedings of the 38th Annual Australian and New Zealand Solar Energy Society Conference, Brisbane, Australia, pp. 494-500 (2000). 



1999

Journal papers

D. Macdonald, A. Cuevas and F. Ferrazza, “Response to phosphorus gettering of different regions of cast multicrystalline silicon ingots” Solid-State Electronics, 43 575-581 (1999).pdf

D. Macdonald and A. Cuevas, “Trapping of minority carriers in multicrystalline silicon” Applied Physics Letters, 74 (12) pp.1710-1712 (1999).pdf

A. Cuevas, M. Stocks, D. Macdonald, M. Kerr and C. Samundsett, “Recombination and trapping in multicrystalline silicon” IEEE Transactions on Electron Devices, 46 (10) pp.2026-2034 (1999).pdf

D. Macdonald, M. Kerr and A. Cuevas, “Boron-related minority-carrier trapping centers in p-type silicon” Applied Physics Letters, 75 (11) pp.1571-1573 (1999).pdf

Conference papers

A. Cuevas, M. Stocks, D. Macdonald, M. Kerr and C. Samundsett, “Multicrystalline silicon research at the Australian National University” Proceedings of the World Renewable Energy Congress, Perth, Australia, (1999).

A. Cuevas and D. Macdonald, “Origins of carrier trapping centres in p-type multicrystalline silicon” Proceedings of the 9th Workshop on the Role of Impurities and Defects in Silicon Device Processing, Colorado, pp. 120-123 (1999).

D. Macdonald and A. Cuevas, “A study of minority carrier trapping in multicrystalline silicon” Technical Digest of the 11th Photovoltaic Scientists and Engineers Conference, Sapporo, Japan, pp.361-362 (1999). 



1998

Journal papers

D. Macdonald, C. A. Sholl and P. Stephenson, “Nuclear magnetic resonance magnetic dipolar spectral density functions for two-dimensional lattice diffusion: hexagonal systems” Journal of Physics: Condensed Matter, 10 (2) pp.417-428 (1998).pdf

Conference papers

A. Cuevas, M. Stocks, D. Macdonald and R. Sinton, “Applications of the quasi-steady-state photoconductance technique” Proceedings of the 2nd World Conference on Photovoltaic Solar Energy Conversion, Vienna, Austria, pp. 1236-1242 (1998).

D. Macdonald and A. Cuevas, “Cross-contamination as a novel technique for studying impurities in multicrystalline silicon” Proceedings of the 2nd World Conference on Photovoltaic Solar Energy Conversion, Vienna, Austria, (1998).

A. Cuevas and D. Macdonald, “Lifetime studies of multicrystalline silicon” Proceedings of the 8th Workshop on the Role of Impurities and Defects in Silicon Device Processing, Colorado, (1998).

D. Macdonald and A. Cuevas, “Cross-contamination as a novel technique for studying impurities in multicrystalline silicon” Proceedings of the 8th Workshop on the Role of Impurities and Defects in Silicon Device Processing, (1998).

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